Results 131 to 140 of about 519 (175)

Bipolar Static Induction Transistor With Insulated Gate

IEEE Transactions on Electron Devices, 2022
In this article, we show a simple power device architecture that combines the features of the SIT and the power MOSFET: insulated gate, positive threshold, fast switching, current deep in the semiconductor, and compact design. It has the conduction characteristics of a BSIT, and it is voltage-controlled as a MOSFET.
Colalongo L., Richelli A.
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Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) in Terms of Bipolar Transistor Driven by Insulated Gate Bias

2020 6th International Conference on Applied System Innovation (ICASI), 2020
Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Hsin-Chia Yang, Yi-Syuan Lin, Rung Jin Chang, Han-Ya Yang, Sung-Ching Chi   +4 more
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Latching in lateral insulated gate bipolar transistors

1987 International Electron Devices Meeting, 1987
The maximum gate controllable current of several different lateral insulated gate bipolar transistor (LIGBT) structures have been investigated. It is shown that the turn-on gate resistance affects the latching current of LIGBT's because of the faster turn-on of the lateral current component than the vertical current component. Addition of p+ sinker, n+
T.P. Chow, D.N. Pattanayak, B.J. Baliga, M.S. Adler   +3 more
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Adjustable high-speed insulated gate bipolar transistor

IEEE Transactions on Plasma Science, 2006
A new adjustable insulated gate bipolar transistor (IGBT) with Si/SiGe heterojunction collector structures is proposed to improve the operation speed and decrease the turnoff power loss by suppressing the tail-current. SiGe collector provides low contact resistance without consequently sacrificing turnoff losses, and also acts to suppress hole ...
null Fei Zhang, null Lina Shi, null Chengfang Li, null Liang Zhang, null Wei Wang, null Wen Yu, null Xiaowei Sun   +6 more
openaire   +1 more source

"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

1987 International Electron Devices Meeting, 1987
This paper describes an improved IGBT with a trench gate structure, which demonstrates a low forward voltage drop of 1.4 volts at a forward conduction current density of 200A/cm2. This device structure was fabricated using a self-aligned process that permits closely spaced vertical trench gates with a unit cell of 8 µm.
H.R. Chang, B.J. Baliga, J.W. Kretchmer, P.A. Piacente   +3 more
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Insulated Gate Bipolar Transistors

1998
In this chapter, the basic structure and operating characteristics of the IGBT are first described. The analysis of forward and reverse blocking capability is then performed followed by discussion of the on-state characteristics of IGBTs with various collector structures.
Ranbir Singh, B. Jayant Baliga
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A modular gate drive circuit for insulated gate bipolar transistors

Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, 2002
A novel gate drive circuit for insulated gate bipolar transistors (IGBTs) is presented which provides high-speed switching with attention to dV/dt requirements. It also provides pulse-by-pulse overcurrent protection through on-state voltage monitoring while sending out a fault signal to the control circuit.
S.K. Biswas, B. Basak, K.S. Rajashekara
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Parasitic extraction methodology for insulated gate bipolar transistors

APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058), 2000
This paper presents a methodology for extraction of the electrical package parasitics of insulated gate bipolar transistor power modules using simple electrical measurements. Nonidealities of device performance in zero-voltage and zero-current switching are exploited to obtain the parasitic collector and emitter inductance.
M. Trivedi, K. Shenai
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Promising Algorithm Addressing Characteristic Curves of Insulated Gated Bipolar Transistor (IGBT) Fitted by Applying Bipolar Transistor Driven by Insulated Gate Bias

2021 7th International Conference on Applied System Innovation (ICASI), 2021
Power devices have been overwhelmingly popular for the last decades. Insulated Gate Bipolar Transistor (IGBT) is quite dominant for the capability of providing relatively high current at pretty high sustaining breakdown voltages. The underlying bipolar junction transistors (including NPN and PNP) get activated as the bias is applied to the isolated ...
Hsin-Chia Yang, Sung-Ching Chi, Pei-Jun Yang, Chia-Chun Lin, Kuan-Hung Chen, You-Sheng Lin   +5 more
openaire   +1 more source