Results 161 to 170 of about 519 (175)

An insulated gate bipolar transistor with high surge endurance

Electronics and Communications in Japan (Part II: Electronics), 1996
AbstractThe relationship between the device property under drain‐source breakdown and device structure parameters of insulated gate bipolar transistors was simulated. Then the following facts were revealed: 1) the impurity concentration in the n−drain layer and the layer thickness determine the breakdown mode.
Norihito Tokura, Naoto Okabe, Kunihiko Hara   +2 more
openaire   +1 more source

Computer Aided Optimization of Insulated Gate Bipolar Transistors

ECS Meeting Abstracts
Compared to other types of transistors, insulating gate bipolar transistors (IGBTs) have high on-state current and breakdown voltage, which make them ideal for low-frequency (<20 kHz) power applications, such as switching devices for motor drive systems and uninterruptible power supplies.
Pranathi Brungi, Petru Andrei
openaire   +1 more source

D.C. Drive System With the Insulated Gate Bipolar Transistors

2006 IEEE International Conference on Automation, Quality and Testing, Robotics, 2006
A reversible D.C. drive system, which employs a four-quadrant chopper with the insulated gate bipolar transistors (IGBT), is presented. The chopper circuit employs a "half-bridge" configuration. The operation of the converter was tested at a command frequency of [1÷10] kHz.
openaire   +1 more source

Insulated Gate Bipolar Transistors

2023
openaire   +1 more source

High Power Insulated Gate Bipolar Transistors (IGBTs)

Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988
H. Ohashi, A. Nakagawa, M. Hideshima
openaire   +1 more source

New Lateral Insulated-Gate Bipolar Transistor on Silicon-on-Insulator

Journal of the Korean Physical Society, 2002
Choi Woo-Beom, Sung Woong-Je, Park Chun-Il, Kim Sangsig, Sung Man Young   +4 more
openaire   +1 more source

Insulated Gate Bipolar Transistor

2007
S. Abedinpour, K. Shenai
openaire   +1 more source

Series connection of insulated gate bipolar transistors (IGBTs)

2005 European Conference on Power Electronics and Applications, 2005
R. Withanage, N. Shammas, S. Tennakoon
openaire   +1 more source

Insulated gate bipolar transistor

2018
openaire   +1 more source

The trench planar insulated gate bipolar transistor (TPIGBT)

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389), 2003
O. Spulber, E.M.S. Narayanan, M.M. De Souza, M. Sweet, J.V.S.C. Bose, J.V. Hardikar   +5 more
openaire   +1 more source