Results 151 to 160 of about 3,543 (201)

MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics. [PDF]

Sci Rep, 2016
Hong WC, Ku CJ, Li R, Abbaslou S, Reyes P, Wang SY, Li G, Lu M, Sheng K, Lu Y.   +9 more
europepmc   +1 more source

Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices. [PDF]

Micromachines (Basel), 2018
Huang H, Li F, Sun Z, Cao Y.
europepmc   +1 more source

Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers. [PDF]

Sci Rep, 2017
Chen S, Diao S, Li P, Nakamura T, Yoshita M, Weng G, Hu X, Shi Y, Liu Y, Akiyama H.   +9 more
europepmc   +1 more source

Hybrid Piezo-Electromagnetic Device Designed to Harvest the Vibrations of the Human Body. [PDF]

Micromachines (Basel)
Zărnescu GC, Pîslaru-Dănescu L, Stamatin I.   +2 more
europepmc   +1 more source

The MR Cap: A single-sided MRI system designed for potential point-of-care limited field-of-view brain imaging. [PDF]

Magn Reson Med, 2019
McDaniel PC, Cooley CZ, Stockmann JP, Wald LL.   +3 more
europepmc   +1 more source

A Wireless, Multicolor Fluorescence Image Sensor Implant for Real-Time Monitoring in Cancer Therapy. [PDF]

IEEE J Solid-State Circuits
Roschelle M, Rabbani R, Gweon S, Kumar R, Vercruysse A, Cho NW, Spitzer MH, Niknejad AM, Stojanović VM, Anwar M.   +9 more
europepmc   +1 more source

A high-efficiency transformer-in-package isolated DC-DC converter using glass-based fan-out wafer-level packaging. [PDF]

Fundam Res
Cheng L, Chen Z, Yu D, Pan D.
europepmc   +1 more source

A review of GaN RF devices and power amplifiers for 5G communication applications. [PDF]

Fundam Res
Lu H, Zhang M, Yang L, Hou B, Martinez RP, Mi M, Du J, Deng L, Wu M, Chowdhury S, Ma X, Hao Y.   +11 more
europepmc   +1 more source

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SCR-LDMOS. A novel LDMOS device with ESD robustness

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2002
A novel lateral power device structure with a very high degree of ESD (electrostatic discharge) robustness is presented. This device called the SCR-LDMOS is a modification of the lateral LDMOSFET with good on state and blocking characteristics.
S. Pendharkar, R. Teggatz, J. Devore, J. Carpenter, T. Efland, C.-Y. Tsai   +5 more
openaire   +1 more source