Results 11 to 20 of about 3,543 (201)

Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage

IET Circuits, Devices and Systems, 2022
In this study, design considerations of a new device structure are presented to improve the self‐heating effect (SHE) and the breakdown voltage of the Deep Gate LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor and compared with a ...
Amir Gavoshani, Ali A. Orouji
doaj   +2 more sources

Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer

Advances in Condensed Matter Physics, 2015
In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at ...
Jingjing Jin, Shengdong Hu, Yinhui Chen, Kaizhou Tan, Jun Luo, Feng Zhou, Zongze Chen, Ye Huang   +7 more
doaj   +2 more sources

Design of a Novel W-Sinker RF LDMOS

Advances in Condensed Matter Physics, 2015
A novel RF LDMOS device structure and corresponding manufacturing process are presented in this paper. Deep trench W-sinker (tungsten sinker) is employed in this technology to replace the traditional heavily doped diffusion sinker which can shrink chip ...
Xiangming Xu, Han Yu, Jingfeng Huang, Chun Wang, Wei Ji, Zhengliang Zhou, Ying Cai, Yong Wang, Pingliang Li, Peng-Fei Wang, David Wei Zhang   +10 more
doaj   +2 more sources

Design of LDMOS Device Modeling Method Based on Neural Network. [PDF]

Comput Intell Neurosci, 2022
The rapid development of power semiconductor devices is helping to realize a low‐carbon society and provide a better life for everyone. Power semiconductors not only are used in many large‐scale industrial control fields such as power transmission and control in power grids, rail transit traction systems, and defense weapons and equipment, but also ...
Liu T, Wen T, Zhang W, He N, Zhang S, Song H.   +5 more
europepmc   +2 more sources

Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield

Active and Passive Electronic Components, 2019
LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently.
Haifeng Mo, Yaohui Zhang, Helun Song
doaj   +2 more sources

DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

Advances in Condensed Matter Physics, 2015
An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on
Xiangming Xu, Pengliang Ci, Xiaoyu Tang, Jing Shi, Zhengliang Zhou, Jingfeng Huang, Peng-Fei Wang, David Wei Zhang   +7 more
doaj   +2 more sources

A Neural Recording and Stimulation Chip with Artifact Suppression for Biomedical Devices. [PDF]

J Healthc Eng, 2021
This paper presents chip implementation of the integrated neural recording and stimulation system with stimulation‐induced artifact suppression. The implemented chip consists of low‐power neural recording circuits, stimulation circuits, and action potential detection circuits.
Liu X, Li J, Chen T, Wang W, Je M.
europepmc   +2 more sources

Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor

Fushe yanjiu yu fushe gongyi xuebao, 2022
Lateral diffused metal oxide semiconductors (LDMOS) used in power management integrated circuits demonstrate low anti-radiation performance. To address this issue, a high voltage radiation hardened LDMOS structure was studied, and an N-LDMOS device with ...
CHU Fei, CHEN Hongzhuan, PENG Ling, WANG Ying, NING Jingyi   +4 more
doaj   +1 more source

High Brightness, Highly Directional Organic Light‐Emitting Diodes as Light Sources for Future Light‐Amplifying Prosthetics in the Optogenetic Management of Vision Loss

Advanced Optical Materials, Volume 11, Issue 13, July 4, 2023., 2023
Ultrahigh brightness organic light‐emitting diodes (OLEDs) with highly directional emission are developed and optimized. Analysis of the generated photon flux and device stability indicates that these OLEDs can be useful as light sources in future complementary metal‐oxide‐semiconductor (CMOS) integrated visual prosthetics that serve as light ...
Sabina Hillebrandt, Changmin Keum, Yali Deng, Joël Chavas, Charlie Galle, Thomas Hardin, Francesco Galluppi, Malte C. Gather   +7 more
wiley   +1 more source

500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit

IET Circuits, Devices &Systems, Volume 17, Issue 4, Page 199-204, July 2023., 2023
The authors’ present a LDMOSFET with β‐Ga2O3 for increasing breakdown voltage and power figure of merit. The β‐LDMOSFET structure outperforms performance in the VBR, increasing it to 500 versus 84.4 V in a standard LDMOSFET design. The suggested β‐LDMOSFET has RON ∼ 2.3 m & ohm; cm−2 and increased the PFOM (VBR2/RON) to 108.6 MW/cm2.
Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi   +2 more
wiley   +1 more source