Theory Based on Device Current Clipping to Explain and Predict Performance Including Distortion of Power Amplifiers for Wireless Communication Systems [PDF]
, 2008 Power amplifiers are critical components in wireless communication systems that need to have high efficiency, in order to conserve battery life and minimise heat generation, and at the same time low distortion, in order to prevent increase of bit ...
Tian, Yunjia, Tian, Yunjia
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Bifurcation analysis of stabilization circuits in an L-band LDMOS 60-W power amplifier [PDF]
, 2005 n this letter, the global stability analysis of an L-band push-pull power amplifier is presented. The analysis is carried out for the amplifier operating in different modes, such as Class AB, Class B, and Class E/F, considering variations in the bias ...
Rutledge, David B. +2 more
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Numerical Analysis of the LDMOS With Side Triangular Field Plate
IEEE Journal of the Electron Devices Society, 2019 A Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) with side triangular field plate (STFP) is proposed for improving the breakdown voltage (BV) and reducing the specific on-resistance (Ron,sp). The main feature of the novel LDMOS is the STFPs at
Jiafei Yao +5 more
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IEEE Journal of the Electron Devices Society, 2022 An ultra-low specific on-resistance 4H-SiC power laterally diffused metal oxide semiconductor (LDMOS) device is proposed for 1200V-class applications.
Moufu Kong +5 more
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Comparative analysis of VDMOS/LDMOS power transistors for RF amplifiers [PDF]
, 2009 A comparison between the RF performance of vertical and lateral power MOSFETs is presented. The role of each parasitic parameter in the assessment of the power gain, 1-dB compression point, efficiency, stability, and output matching is evaluated ...
Chevaux, N., De Souza, M.M.
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LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification
IEEE Journal of the Electron Devices Society, 2022 We analytically and numerically investigate the performance of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing on mid-voltage (30 V – 100 V) power applications.
Ali Saadat +3 more
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A breakdown voltage model for implanted resurf p-LDMOS device on n+ buried layer [PDF]
, 1994 This paper presents an analytical expression of the breakdown voltage of a high voltage implanted RESURF p-LDMOS device which uses the n+ buried layer as an effective device substrate.
Van Calster, A. +2 more
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Superjunction LDMOS With Dual Gate for Low On-Resistance and High Transconductance
IEEE Journal of the Electron Devices Society, 2020 In this paper, a novel bulk silicon lateral superjunction double diffused MOSFET (SJ-LDMOS) with dual gate (DG) is proposed and its mechanism is investigated by numerical TCAD simulations.
Zhen Cao, Licheng Jiao
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Recent Advances in Real-Time Load-Pull Systems [PDF]
, 2008 In this paper, some of the latest advances in real-time load-pull technologies will be described. A recently introduced ultralow-loss directional coupler, which has been designed and realized by the authors, provides a number of advantages when used in ...
Ferrero, Andrea Pierenrico +2 more
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Hot-Carrier-Induced Reliability for Lateral DMOS Transistors With Split-STI Structures
IEEE Journal of the Electron Devices Society, 2021 In this work, four kinds of lateral double-diffused MOS (LDMOS) devices with different split shallow trench isolation (STI) structures (Device A: LDMOS with traditional split-STI, Device B: LDMOS with slope-STI, Device C with step-STI and Device D with H-
Li Lu +7 more
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