Results 61 to 70 of about 3,543 (201)
Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications [PDF]
, 2017 A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications.
11th European Space Power Conference +12 more
core +2 more sources
Electrical current disrupts the electron transfer in defined consortia
Microbial Biotechnology, Volume 17, Issue 1, January 2024.Abstract Improving methane production through electrical current application to anaerobic digesters has garnered interest in optimizing such microbial electrochemical technologies, with claims suggesting direct interspecies electron transfer (DIET) at the cathode enhances methane yield.
Mon Oo Yee +2 more
wiley +1 more source
Evolution of Black‐Box Models Based on Volterra Series
Journal of Applied Mathematics, Volume 2015, Issue 1, 2015., 2015 This paper presents a historical review of the many behavioral models actually used to model radio frequency power amplifiers and a new classification of these behavioral models. It also discusses the evolution of these models, from a single polynomial to multirate Volterra models, presenting equations and estimation methods.
Daniel D. Silveira +3 more
wiley +1 more source
High-voltage (100 V) ChipfilmTM single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays [PDF]
Advances in Radio Science, 2009 System-in-Foil (SiF) is an emerging field of large-area polymer electronics that employs new materials such as conductive polymers and electrophoretic micro-capsules (E-Ink) along with ultra-thin and thus flexible chips.
J. N. Burghartz, H. Richter, A. Asif
doaj
Results in Physics, 2020 Double silicon drift layers are used to reduce the specific on-resistance (Ron,sp) for a trench-gate-integrated lateral double-diffused MOSFET (DDL TG LDMOS) based on SOI technology in this paper.
Yuan Wang +7 more
doaj +1 more source
Generalised Berglund relation in LDMOS transistors
Electronics Letters, 2011 Berglund related a certain area associated with the normalised MOS C(V) curve to the energy gap of silicon. Despite the fact that in LDMOS transistors the gate capacitance exhibits complicated behaviour associated with the presence of the drift region, it turns out that the Berglund relation remains valid, as confirmed by both measurements and ...
W. Yao +3 more
openaire +1 more source
Unified Analytical Model for SOI LDMOS With Electric Field Modulation
IEEE Journal of the Electron Devices Society, 2020 The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time.
Baoxing Duan +3 more
doaj +1 more source
Optimization of Integrated Transistors for Very High Frequency DC-DC Converters [PDF]
, 2012 This paper presents a method to optimize integrated lateral double-diffused MOSFET transistors for use in very high frequency (VHF, 30-300 MHz) dc-dc converters. A transistor model valid at VHF switching frequencies is developed.
Anderson, David I. +2 more
core +1 more source
Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation [PDF]
, 2016 This paper presents the design and optimization of a 600 V silicon-on-silicon carbide (Si/SiC) laterally diffused MOSFET with linear doping profile in the drift region for high-temperature applications.
Chan, Chun Wa +2 more
core +1 more source
An Initial study on The Reliability of Power Semiconductor Devices [PDF]
, 2010 An initial literature study combined with some basic comparative simulations has been performed on different electricfield modulation techniques and the subsequent reliability issues are reported for power semiconductor devices.
Boksteen, B.K. +3 more
core +1 more source