Novel 600 V Low Reverse Recovery Loss Vertical PiN Diode with Hole Pockets by Bosch Deep Trench [PDF]
, 2016 The performance of a novel diode with characteristic trench shape is predicted by TCAD simulation. A novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process is proposed for a better trade-off curve between reverse recovery loss ...
Baba Akiyoshi +3 more
core +2 more sources
120V Low Side LDMOS Device with Sided Isolation of 0.35μm CMOS Compatible Process
MATEC Web of Conferences, 2018 In this paper, a novel 120V multiple RESURF lateral double-diffused MOS (LDMOS) transistor with shallow trench isolation (STI) structure in low side is developed and successfully simulated.
Deivasigamani Ravi +5 more
doaj +1 more source
Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
Results in Physics, 2020 To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo +6 more
doaj +1 more source
A New Built-In Defect-Based Testing Technique to Achieve Zero Defects in the Automotive Environment [PDF]
, 2018 Efficient screening procedures for the control of the defectivity are vital to limit early failures especially in critical automotive applications.
Ciappa, Mauro +3 more
core
Characterization and Modeling of SH in Multi-Finger RF LDMOS Transistors Using BSIM-BULK Model
IEEE Journal of the Electron Devices SocietyIn this work, we present self-heating (SH) characterization and modeling of 130 nm Bipolar-CMOS-DMOS (BCD) technology node multi-finger Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) transistors using extensive DC and S-parameter ...
Ayushi Sharma +5 more
doaj +1 more source
Dynamic load modulation of high power amplifiers with varactor-based matching networks [PDF]
, 2009 In this paper, the results of dynamic load modulation on a high power amplifier is shown with experiments. A simple static nonlinear model is used as an inverse model, and by dynamically controlling both the input signal to the power amplifier and the ...
Cao, Haiying +4 more
core +1 more source
Double trenches LDMOS with trapezoidal gate
Micro & Nano Letters, 2018 A novel double trenches lateral double diffused metal oxide semiconductor with trapezoidal gate (TGDT LDMOS) is proposed. One feature of the device is that two dielectric trenches which are equivalent to two field plates are introduced in the drift region.
Na Yuan +6 more
openaire +1 more source
Progress on DC-DC Converters for a Silicon Tracker for the sLHC Upgrade [PDF]
, 2009 There is a need for DC-DC converters which can operate in the extremely harsh environment of the sLHC Si Tracker. The environment requires radiation qualification to a total ionizing radiation dose of 50 Mrad and a displacement damage fluence of 5 x 1014
Baker, O +11 more
core +1 more source
Numerical investigation on L-shaped vertical field plate in high-voltage LDMOS
Results in Physics, 2019 In this work, an L-shaped vertical field plate (LVFP) is introduced in high-voltage lateral double-diffused MOSFET (LDMOS). The LVFP is embedded in an oxide trench that penetrates into the drift region. Compared with the conventional vertical field plate
Yue Hu +5 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2020 To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device's breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper.
Kemeng Yang +6 more
doaj +1 more source