Results 81 to 90 of about 3,543 (201)
A fully-integrated 1.8-V, 2.8-W, 1.9-GHz, CMOS power amplifier [PDF]
, 2003 This paper demonstrated the first 2-stage, 2.8W, 1.8V, 1.9GHz fully-integrated DAT power amplifier with 50Ω input and output matching using 0.18μm CMOS transistors. It has a small-signal gain of 27dB.
Aoki, I. +3 more
core
Modeling and Simulation of LDMOS Device
International Journal of Engineering Research, 2015 Laterally Diffused MOSFET (LDMOS) are widely used in modern communication industry and other applications. LDMOS offers various advantages over conventional MOSFETs with little process change. In the present paper, an LDMOS device is modeled and simulated in SILVACO device simulator package using the ATHENA and ATLAS modules.
Sunitha HD, Keshaveni N
openaire +1 more source
A Comprehensive Mixed-Mode Time-Domain Load- and Source-Pull Measurement System [PDF]
, 2010 We present a novel test set devised for nonlinear balanced device characterization using load-pull techniques. The system is capable of measuring the voltage and current waveforms at the calibration reference planes while independently tuning the device ...
Bonino, Serena +3 more
core +1 more source
A Substrate-Dissipating (SD) Mechanism for a Ruggedness-Improved SOI LDMOS Device
IEEE Journal of the Electron Devices Society, 2018 An SOI LDMOS device with improved ruggedness under unclamped inductive switching (UIS) is described based on the substrate-dissipating (SD) mechanism.
Bing Wang, Zhigang Wang, James B. Kuo
doaj +1 more source
A new lateral trench-gate conductivity modulated power transistor [PDF]
, 1999 In this paper, a new conductivity modulated power transistor called the Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented. This structure incorporates a trench-gate in which the locations of the channel and source in conventional LIGBT have ...
Cai, J +4 more
core +2 more sources
A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate
IEEE Journal of the Electron Devices Society, 2019 An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts a resistive field plate (RFP) to help QVSJ satisfy charge-balance.
Junji Cheng +4 more
doaj +1 more source
Optimizing Shortwave Wideband RF Amplifier: Study of Transmission Line Transformer Construction Methods [PDF]
RadioengineeringThis paper presents a study of six physical transmission line transformers (TLTs) designed to provide wideband output matching for laterally diffused metal oxide semiconductor (LDMOS) transistors within a push-pull amplifier operating in the 1.8-30 MHz ...
G. Krupa, G. Budzyn
doaj
Parameter Extraction for the PSPHV LDMOS Transistor Model
IEEE Journal of the Electron Devices Society, 2020 This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating.
Kejun Xia +2 more
doaj +1 more source
Computational Modeling of Stochastic Processes in Electron Amplifiers [PDF]
, 2010 A computational method for simulation of stochastic processes of an electron multiplication in microchannel electron amplifiers is developed. The method is based on 3D Monte Carlo (MC) simulations and theorems about serial and parallel amplifcation ...
Shymanska, A
core +2 more sources
Case Studies in Thermal EngineeringThe thermal behavior analysis is undoubtedly the main concern when studying semiconductor devices' and structures' physical mechanics. To the best of our knowledge, simulations studies with an experimental validation of the temperature effect vs ...
Mohammed Almatrafi, Mohamed Ali Belaïd
doaj +1 more source