Results 11 to 20 of about 26,029 (244)

Liquid‐Phase Quasi‐Epitaxial Growth of Highly Stable, Monolithic UiO‐66‐NH2 MOF thin Films on Solid Substrates

ChemistryOpen, 2020
High quality, monolithic UiO‐66‐NH2 thin films on diverse solid substrates have been prepared via a low temperature liquid phase epitaxy method. The achievement of continuous films with low defect densities and great stability against high temperatures ...
Dr. Tawheed Hashem, Dr. Elvia P. Valadez Sánchez, Dr. Peter G. Weidler, Dr. Hartmut Gliemann, Dr. Mohamed H. Alkordi, Prof. Christof Wöll   +5 more
doaj   +2 more sources

Liquid phase epitaxy of GaAlAs on GaAs substrates with fine surface corrugations [PDF]

, 1974
Liquid phase epitaxy of GaAlAs was performed on GaAs fine surface corrugations.
Aiki, K., Morikawa, T., Nakamura, M., Umeda, J., Yariv, A., Yen, H. W.   +5 more
core   +1 more source

Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy

Applied Sciences, 2020
Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic ...
Aditya Prabaswara, Jens Birch, Muhammad Junaid, Elena Alexandra Serban, Lars Hultman, Ching-Lien Hsiao   +5 more
doaj   +1 more source

Cd diffused mesa-substrate buried heterostructure InGaAsP/InP laser [PDF]

, 1985
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement.
Kapon, E., Lu, L. T., Margalit, S., Rav-Noy, Z., Yariv, A., Yi, M. B.   +5 more
core   +1 more source

Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016
Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub ...
F.F. Sizov
doaj   +1 more source

The correlation between parameters of gallium arsenic epitaxy layers and technology of growth’s process [PDF]

Технологія та конструювання в електронній апаратурі, 2009
The correlation between mobility and carriers concentration and growth’s conditions of gallium arsenic layers by liquid phase epitaxy is established. It is possible to obtain layers with required mobility and concentration of charge carriers by changing ...
A. V. Karimov, D. M. Yodgorova, E. N. Yakubov   +2 more
doaj   +1 more source

InGaAsP/InP undercut mesa laser with planar polyimide passivation [PDF]

, 1983
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer.
Chen, T. R., Chiu, L. C., Harder, C., Hasson, A., Koren, U., Margalit, S., Yariv, A., Yu, K. L.   +7 more
core   +1 more source

Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications

Energies, 2022
The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs substrates were investigated in a comparative plan with a view of their possible application in multi-junction solar cells.
Vesselin Donchev, Malina Milanova, Stefan Georgiev   +2 more
doaj   +1 more source

Mass transfer in liquid-phase epitaxy of two-layer systems [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012
A liquid phase epitaxy diffusion model of a two-layer system at instable cooling speed of the solution-melt has been developed. It was discovered that the transition process continues even after the termination of cooling, due to which the layer growth ...
Dranchuk S. M., Zavadzkii V. A., Mokritskii V. A.   +2 more
doaj   +2 more sources

Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires

Nanomaterials, 2020
III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle.
Vladimir G. Dubrovskii, Hadi Hijazi
doaj   +1 more source