Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si [PDF]
, 2016 Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates.
Dubrovskii, Vladimir G. +8 more
core +2 more sources
Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP [PDF]
, 1982 Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process.
Bar-Chaim, N. +5 more
core +1 more source
Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser [PDF]
, 1990 Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (
Chen, T. R. +6 more
core +1 more source
Phased arrays of buried-ridge InP/InGaAsP diode lasers [PDF]
, 1985 Phase-locked arrays of buried-ridge InP/InGaAsP lasers, emitting at 1.3 µm, were grown by liquid phase epitaxy. The arrays consist of index-guided, buried-ridge lasers which are coupled via their evanescent optical fields.
Kapon, E. +5 more
core +1 more source
Optical surface waves in periodic layered medium grown by liquid phase epitaxy [PDF]
, 1978 Optical surface waves propagating along the surface of a multilayer stack have been observed. The multilayer stack is grown by liquid phase epitaxy.
Chen, P. C., Ng, W., Yariv, A., Yeh, P.
core +1 more source
Organometallic perovskite single crystals grown on lattice-matched substrate for photodetection
Nano Materials Science, 2020 In this work, we demonstrate that an organometallic perovskite (OP) single crystal for effective photodetection can be grown on a gold (Au)-decorated substrate using liquid phase epitaxy.
Xin Wang +10 more
doaj +1 more source
Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasers [PDF]
, 1988 Broad area graded‐index separate‐confinement heterostructure single quantum well lasers grown by molecular‐beam epitaxy (MBE) with threshold current density as low as 93 A/cm^2 (520 μm long) have been fabricated.
Bar-Chaim, N. +7 more
core +1 more source
Obtaining of bilateral high voltage epitaxial p–i–n Si structures by LPE method [PDF]
Технологія та конструювання в електронній апаратурі, 2013 Silicon p–i–n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE). In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex.
N. M. Vakiv +3 more
doaj +2 more sources
Magnetic Hyperfine Structure of Epitaxial Films of Nickel Ferrite
Фізика і хімія твердого тіла, 2016 Comparative NGR study of the parameters of the magnetic hyperfine structure of epitaxial NiFe2O4 films grown on MgO single-crystal substrates of orientations of (100) and (111) by liquid phase epitaxy (LPE) and chemical transport reactions (CTR) is ...
S. I. Yushchuk +2 more
doaj +1 more source
Multiferroic hexagonal ferrites (h-RFeO$_3$, R=Y, Dy-Lu): an experimental review [PDF]
, 2014 Hexagonal ferrites (h-RFeO$_3$, R=Y, Dy-Lu) have recently been identified as a new family of multiferroic complex oxides. The coexisting spontaneous electric and magnetic polarizations make h-RFeO$_3$ rare-case ferroelectric ferromagnets at low ...
Wang, Wenbin, Xu, Xiaoshan
core +4 more sources