Results 161 to 170 of about 9,722 (211)

Heavy-Ion Device Cross-Section Response in Magnetic Tunnel Junctions for a Radiation Hardened 16Mb Magnetoresistive Random Access Memory (MRAM)

2017 IEEE Radiation Effects Data Workshop (REDW), 2017
Heavy-ion device effect cross-sections from irradiated MRAM Magnetic Tunnel Junctions are LET/atomic number, and not fluence, dominated, with distribution tails similar to thermally-accelerated resistance and magnetoresistance shifts that also depend physically on the tunnel barrier.
R. Katti
openaire   +2 more sources

Development of Highly Manufacturable, Reliable, and Energy-Efficient Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM)

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2022
We demonstrate highly manufacturable, reliable, and energy-efficient SOT-MRAM by developing damage-free reactive-ion etching (RIE) recipes. The experimental results demonstrate that C-F Etch lowers the CoFeB/MgO interfacial anisotropy, partially destroys
S. Z. Rahaman, Y.-J. Chang, Y.-C. Hsin, S.-Y. Yang, F.-M. Chen, K.-M. Chen, I-J. Wang, H.-H. Lee, G.-L. Chen, Y.-H. Su, C.-Y. Shih, S.-C. Chiu, J.-H. Wei, S.-C. Yen, K.-C. Huang, C.-C. Chen, M.-C. Chen, S.-S. Sheu, W.-C. Lo, S.-Z. Chang, Y.-C. See, D.-L. Deng, C.-I Wu   +22 more
openaire   +2 more sources

Channel Capacity and Soft-Decision Decoding of LDPC Codes for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)

Journal of Communications, 2013
Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology, featuring compelling advantages in scalability, speed, endurance, and power consumption. In this paper, we focus on large-capacity stand-alone STT-MRAM, and investigate the channel capacity and the viability of applying low ...
null Kui Cai, null Zhiliang Qin, null Bingjin Chen   +2 more
openaire   +2 more sources

Materials Requirements for Magnetic Random-Access Memory (MRAM) Devices

2005
Wolfgang Raberg, Arunava Gupta
openaire   +2 more sources

Magnetic Random Access Memory (MRAM)

2023
Abstract The principle of storing information in a solid state magnetic device is first described together with the principles and early designs of such a system which were implemented for a restricted range of applications. In particular third generation MRAM where again data is stored perpendicular to the plane of the film and is based
K. O’Grady, G. Vallejo Fernandez, A. Hirohata   +2 more
openaire   +1 more source

Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory

International Symposium on Circuits and Systems, 2021
Benefitting from its non-volatility, high speed, low power and inherent radiation hardened characteristic, magnetic random access memory (MRAM) has been used in aerospace and avionic electronics.
Deming Zhang, Xian Wang, Kaili Zhang, L. Zeng, You Wang, Bi Wang, Erya Deng, Chuan-Yu Wang, Peng Wu, Youguang Zhang, Weisheng Zhao   +10 more
semanticscholar   +1 more source

Computational Study for Spin-orbit Torque Magnetic Random Access Memory

International Electron Devices Meeting, 2021
We provide the first comprehensive computational study of spin-orbit torque magnetic random access memory (SOT-MRAM) device. A framework combining ab initio and micromagnetic/macrospin simulations is proposed to probe into the key performances of SOT ...
Yuhao Jiang, Hangyu Zhou, D. Zhu, Chao Wang, Zhaohao Wang, Weisheng Zhao   +5 more
semanticscholar   +1 more source

Realization of a Sub 10-nm Silicene Magnetic Tunnel Junction and Its Application for Magnetic Random Access Memory and Digital Logic

IEEE transactions on nanotechnology, 2021
Silicene has attracted the research interest due to its excellent electronic and spin properties. Furthermore, CrO2 half metal due to its high Curie temperature and high spin polarization is well suited for electrodes. In this work, we have simulated the
M. Gani, K. Shah, S. A. Parah
semanticscholar   +1 more source

Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory

, 2021
Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with spin-transfer torque devices.
Rahul Mishra, Taehwan Kim, Jongsun Park, Hyunsoo Yang   +3 more
semanticscholar   +1 more source

Deep Learning-Based Decoding of Linear Block Codes for Spin-Torque Transfer Magnetic Random Access Memory

IEEE transactions on magnetics, 2021
Thanks to its superior features of fast read/write speed and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising non-volatile memory (NVM) technology that is suitable for many applications. However,
Xingwei Zhong, K. Cai, Z. Mei, Tony Q. S. Quek   +3 more
semanticscholar   +1 more source