Results 171 to 180 of about 9,722 (211)

Variability Study of Toggle Spin Torques Magnetic Random Access Memory

IEEE transactions on magnetics, 2021
With the process node further scaling down, the bit cell of magnetic random access memory (MRAM) device suffers from severe failure and reliability problems due to its process variation.
Zhitai Yu, Yijiao Wang, Zeqing Zhang, Jianglong Zhi, Zhaohao Wang, Tianxiao Nie, Weisheng Zhao   +6 more
semanticscholar   +1 more source

Soft Error Sensitivity of Magnetic Random Access Memory and Its Radiation Hardening Design

International SoC Design Conference, 2021
Spin-orbit torque magnetic random access memory (SOT-MRAM) has been considered as a candidate for the next-generation memory thanks to its ultrafast switching speed, zero static power consumption, and nearly unlimited endurance.
Bi Wang, Zhaohao Wang, Min Wang, Weisheng Zhao, Liang Wang, Yuanfu Zhao   +5 more
semanticscholar   +1 more source

An 8kb spin-orbit-torque magnetic random-access memory

International Symposium on VLSI Technology, Systems, and Applications, 2021
We’d built 8kb spin-orbit-torque (SOT) MRAM chips to evaluate our cell design and the process recipes to integrate them on CMOS wafer. For the SOT cell, the switching threshold is well correlated to the tungsten channel resistivity. We will show the cell
Guan-Long Chen, I. Wang, P. Yeh, Sih-Han Li, Shan-Yi Yang, Y. Hsin, Hsin-Tsun Wu, Hsu-Ming Hsiao, Yao-Jen Chang, Kuan-Ming Chen, S. Z. Rahaman, Hsin-Han Lee, Yi-Hui Su, Fang-Ming Chen, Jeng-Hua Wei, S. Sheu, Chih-I Wu, D. Tang   +17 more
semanticscholar   +1 more source

Polar Coding for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)

2018 IEEE International Magnetics Conference (INTERMAG), 2018
Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology with various potential applications such as working as the embedded NVM or replacing the stand alone DRAM [1]. However, STT-MRAM suffers from process variations and thermal fluctuations, leading to both the write errors and read
Z. Mei, K. Cai, B. Dai
openaire   +1 more source

Probing the Spin Hall Characteristics of W/CoFeB/MgO Based Heterostructures for Spin‐Orbit Torque Based Magnetic Random Access Memory Application

Advanced Electronic Materials, 2021
In this work, the spin Hall characteristics of W/CoFeB/MgO have been systematically studied to provide an in‐depth insight for the optimization of the SOT‐MRAM channel.
Abhijit Ghosh, H. Chung, K. Khoo, J. Shanmugam, J. Qiu, Salauddeen Allauddin, Sze Ter Lim   +6 more
semanticscholar   +1 more source

Design Methodologies for STT-MRAM (Spin-Torque Transfer Magnetic Random Access Memory) Sensing Circuits

IEICE Transactions on Electronics, 2010
Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising technology for next generation nonvolatile universal memory because it reduces the high write current required by conventional MRAM and enables write current scaling as technology becomes smaller in size.
Jisu KIM, Jee-Hwan SONG, Seung-Hyuk KANG, Sei-Seung YOON, Seong-Ook JUNG   +4 more
openaire   +1 more source

Modeling and information theoretic analysis of spin-torque transfer magnetic random access memory (STT-MRAM)

Magnetics Symposium 2014 - Celebrating 50th Anniversary of IEEE Magnetics Society (MSSC50), 2014
Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology, which has compelling advantages in scalability, speed, endurance, and power consumption. In this paper, we first propose a resistance distribution based generic channel model for STT-MRAM.
Kui Cai, Zhiliang Qin, Bingjin Chen
openaire   +1 more source

A High-Speed, Low-Power, High-Reliability and Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory

IEEE Transactions on Circuits and Systems Part 1: Regular Papers
Magnetic Random Access Memory (MRAM) has enormous application potential in the aerospace field due to its nonvolatile, high speed, low power, and inherent radiation resistance characteristics.
Jiaxin Yang, Ziyang Guo, Shixuan Wang, Jilong Liu, Yue Zhang, Weisheng Zhao, L. Zeng, Deming Zhang   +7 more
semanticscholar   +1 more source

Cell Shape and Patterning Considerations for Magnetic Random Access Memory (MRAM) Fabrication

2008
Industrial and academic development laboratories worldwide are working to perfect the circuit designs, fabrication methods and integration schemes required for successful commercial production of Magnetic Random Access Memory (MRAM) devices, a new kind of nonvolatile memory technology that some forecast to be a “universal” memory replacement for DRAM ...
Ditizio, Robert, Werbaneth, Paul, Tegal Corporation, Zhu, Jian-Gang   +3 more
openaire   +1 more source

Performance Prospects of Deeply Scaled Spin-Transfer Torque Magnetic Random-Access Memory for In-Memory Computing

IEEE Electron Device Letters, 2020
In recent years, Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has been considered as one of the most promising non-volatile memory candidates for in-memory computing.
Yuhan Shi, Sangheon Oh, Zhisheng Huang, Xiaoxu Lu, Seung H. Kang, D. Kuzum   +5 more
semanticscholar   +1 more source