Results 181 to 190 of about 9,722 (211)

CMOS-based Spin-Transfer Torque Magnetic Random Access Memory (ST–MRAM)

2010
Recently it has been demonstrated that the vortex core magnetization can be switched by applying a short (
B. C. Choi, Y. K. Hong, A. Lyle, G. W. Donohoe   +3 more
openaire   +1 more source

Process optimization and cryogenic evaluation of spin-orbit torque magnetic random access memory

International Memory Workshop
Magnetoresistive random access memory (MRAM) is proposed to be employed in cryogenic memory for low power consumption due to its excellent outstanding performance at low temperature.
Zhongkui Zhang, Xiaofei Fan, D. Xiong, Huiyan Sun, Xiantao Shang, Bowen Man, Cong Zhang, Shuhui Li, Renjie Su, Chengyuan Sun, Jennifer Zhou, Hongxi Liu, Gefei Wang   +12 more
semanticscholar   +1 more source

Modeling of failure probability and statistical design of spin-torque transfer magnetic random access memory (STT MRAM) array for yield enhancement

Proceedings of the 45th annual Design Automation Conference, 2008
Spin-torque transfer magnetic RAM (STT MRAM) is a promising candidate for future universal memory. It combines the desirable attributes of current memory technologies such as SRAM, DRAM and flash memories. It also solves the key drawbacks of conventional MRAM technology: poor scalability and high write current.
Jing Li, Charles Augustine, Sayeef Salahuddin, Kaushik Roy   +3 more
openaire   +1 more source

Dry etching strategy of spin-transfer-torque magnetic random access memory: A review

, 2020
The spin-based memory, spin transfer torque-magnetic random access memory (STT-MRAM), has the potential to enhance the power efficiency of high density memory systems.
R. Islam, B. Cui, G. Miao
semanticscholar   +1 more source

Spintronic Processing Unit in Spin Transfer Torque Magnetic Random Access Memory

IEEE Transactions on Electron Devices, 2019
Recently, exploiting emerging nonvolatile memories to implement the process-in-memory (PIM) paradigm have shown great potential to address the von Neumann bottleneck and have attracted extensive research and development. In this paper, we present a novel
He Zhang, W. Kang, K. Cao, Bi Wu, Youguang Zhang, Weisheng Zhao   +5 more
semanticscholar   +1 more source

Novel Radiation Hardening Read/Write Circuits Using Feedback Connections for Spin–Orbit Torque Magnetic Random Access Memory

IEEE Transactions on Circuits and Systems Part 1: Regular Papers, 2019
With downscaling of process technology, conventional memories encounter challenges, such as soaring static power, low reliability, and charge sharing effect induced by radiation effects.
Bi Wang, Zhaohao Wang, Bi Wu, Yumeng Bai, K. Cao, Yuanfu Zhao, Youguang Zhang, Weisheng Zhao   +7 more
semanticscholar   +1 more source

Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory

Science China Information Sciences, 2023
Yan Huang, K. Cao, Kun Zhang, Jinkai Wang, Kewen Shi, Zuolei Hao, W. Cai, A. Du, Jialiang Yin, Qing Yang, Junfeng Li, Jianfeng Gao, Chao Zhao, Weisheng Zhao   +13 more
semanticscholar   +1 more source

Magnetic resonance linear accelerator technology and adaptive radiation therapy: An overview for clinicians

Ca-A Cancer Journal for Clinicians, 2022
William A Hal, X Allen Li, Daniel A Low
exaly  

Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

2010 IEEE Radiation Effects Data Workshop, 2010
J. Heidecker, G. Allen, D. Sheldon
semanticscholar   +1 more source

Low writing current magnetoresistive random access memory (MRAM) with side metal pillar write word line (PWWL)

, 2004
C. Hung, M. Kao, Wen-Chin Lin, S. Chao, D. Tang, M. Tsai   +5 more
semanticscholar   +1 more source