Results 171 to 180 of about 25,251 (300)

Engineering TiO₂ memristors: A material-centric review

Shilpa Shivaram, S. K. Suresh Babu, D. Paul, Archana Ashok   +3 more
openalex   +1 more source

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, EarlyView.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

Actor-critic networks with analogue memristors mimicking reward-based learning. [PDF]

Nat Mach Intell
Portner K, Zellweger T, Martinelli F, Bégon-Lours L, Bragaglia V, Weilenmann C, Jubin D, Falcone DF, Hermann F, Hrynkevych O, Stecconi T, La Porta A, Drechsler U, Olziersky A, Offrein BJ, Gerstner W, Luisier M, Emboras A.   +17 more
europepmc   +1 more source

Amorphous Ta2o5 Memristor with Excellent Self-Rectifying and Artificial Synaptic Properties for Artificial Neural Networks

Bumjoo Kim, Geun-Soo Lee, San Kwak, Byeong-Jae Min, B.K. Choï, Hyun-Ju Choi, Sahn Nahm   +6 more
openalex   +1 more source

Ferroelectric Tunnel Junction Memristor Crossbar Array with Annealing Optimization for In‐Memory Computing

Advanced Intelligent Systems, EarlyView.
A 48 × 48 ferroelectric tunnel junction (FTJ) crossbar array is fabricated and optimized through postmetallization annealing, enabling stable polarization switching and reliable multilevel conductance programming. Half‐bias operation, accurate vector–matrix multiplication with less than 1% error, and CIFAR‐10 image classification with near‐software ...
Sangwook Youn, Hwiho Hwang, Hyungjin Kim
wiley   +1 more source

Demonstration of CMOS-compatible memristor-based electrochemical biosensor transducer with threshold-sensing functionality. [PDF]

Nat Commun
Kim YJ, Kwon Y, Yoo Y, Theyagarajan K, Saikrithika S, Lee A, Bae NH, Lee WC, Sim G, Lee Y, Park SO, Cho H, Kang MH, Kim Y, Park Y, Lee KG, Kim CY, Ko H, Sul WS, Lee SJ, Ahn JH, Choi S, Kim KM, Lee J.   +23 more
europepmc   +1 more source

Step‐Efficient Parallel Implementation of n‐bit Full Adders Using Stateful Logic in Memristor Crossbar Arrays

Advanced Intelligent Systems, EarlyView.
A step‐efficient stateful logic architecture is demonstrated using a fabricated 32 × 32 memristor crossbar array, enabling parallel n‐bit full adder operations directly in memory. By optimizing load resistance and voltage configurations, the circuit achieves reliable NIMP, AND, and OR logic operations with minimized computational steps, enhanced ...
Jinwoo Park, Jungjin Lee, Sangwook Youn, Hyungjin Kim   +3 more
wiley   +1 more source

A Lithium Fluoride Interfacial Layer for Low-Voltage and Reliable Perovskite Memristors. [PDF]

ACS Appl Electron Mater
Pendyala NK, Sanjuán I, Chen QG, Lee WY, Chueh CC, Guerrero A.   +5 more
europepmc   +1 more source

Nonplanar Atomic Layer Deposition (ALD)‐Niobium Oxide (NbOx) Neurons for Oscillatory Neural Network Applications

Advanced Intelligent Systems, EarlyView.
This article presents a nonplanar niobium oxide (NbOx) neuron device fabricated using an atomic layer deposition (ALD) method for use in oscillatory neural networks (ONNs). Potentially, such nonplanar geometry allows for high‐density arrays. The desired threshold switching (TS) characteristics are achieved through an interfacial method using a thin ...
Jaehyun Moon, Kitae Kim, Jihyun Kim, Soohyung Park, Yeonjin Yi, Jiyong Woo, Seung‐Youl Kang   +6 more
wiley   +1 more source

Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. [PDF]

RSC Adv
Xiao A, Zhao L, Yang Y, Jin C, Yang X, Ma L, Tian F, Hu W, Huang Z, Gu H.   +9 more
europepmc   +1 more source