Results 81 to 90 of about 13,015 (262)

Optoelectronic Control of Redox Dynamics in POM Memristors for Noise‐Resilient Speech and Hardware‐Level Motion Recognition

Advanced Functional Materials, EarlyView.
Optoelectronic control of redox‐active polyoxometalate clusters in polymer matrices yields hybrid memristors with switchable volatile and non‐volatile modes, enabling reservoir‐type in‐sensor optical preprocessing and stable multilevel synapses for multimodal neuromorphic computing, including noise‐tolerant audiovisual keyword recognition and hardware ...
Xiangyu Ma, Ziyu Lv, Guohua Zhang, Zhongyue Xu, Yongbiao Zhai, Haiming Huang, Qiyan Zhang, Xiaojin Zhao, Yan Wang, Ye Zhou, Ziyu Xiong, Guanglong Ding, Wentao Xu, Su‐Ting Han   +13 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Stochastic compact model for memory and threshold switching memristors

APL Machine Learning
Memristors are electron devices whose resistance changes according to the history of electrical signals applied to their two terminals. These resistance changes can remain for very long times or relax after a short time.
Jordi Suñé, Enrique Miranda
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Patterning of Lead Halide Perovskite Device Stacks on CMOS Readout Using Selective Microfabrication Protocols

Advanced Materials, EarlyView.
We present a microfabrication and integration strategy for lead halide perovskite photodetectors on electronic readouts. Standard photolithography, aqueous processing, selective transparent electrode etching, and plasma‐assisted pixel isolation enable precise monolithic integration of patterned 400 × 400 perovskite microphotodetector arrays on a CMOS ...
Sergey Tsarev, Erfu Wu, Kyuik Cho, Xuqi Liu, Quang Nhat Dang Lung, Emeric Hartman, Tian Sun, Bekir Turedi, Gebhard J. Matt, Stefanie Frick, Sebastian Siol, Taekwang Jang, Ivan Shorubalko, Sergii Yakunin, Maksym V. Kovalenko   +14 more
wiley   +1 more source

Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines [PDF]

, 2010
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems.
Derek Abbott, Kamran Eshraghian, Kyoung-rok Cho, Omid Kavehei, Soon-ku Kang, Student Member, Sung-mo Steve Kang   +6 more
core  

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source

RF Magnetron Sputtered Tungsten Disulfide Films: Influence of Target Preparation, Deposition Parameters, and Storage Conditions on Thin Film Stoichiometry

Advanced Materials Interfaces, EarlyView.
Sputtered WS2 films were investigated in terms of their S‐ and O‐concentration depending on deposition power and pre‐sputter time. Chemical and structural investigations were done using EDS, TEM, SEM, AFM, XRD. In general, 20 W films exhibit a wide variation in stoichiometry and structure whereas 80 W films demonstrate a higher S/W ratio than 20 W ...
Theresa Scheler, Pascal Illgner, Thomas Kups, Michaela Blum, Peter Schaaf   +4 more
wiley   +1 more source

High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process

Advanced Materials Interfaces, EarlyView.
This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner, Hubert N. Elly, Kaifan Yue, Cyra Moobed, Siddharth Kurup, Daniel Aziz, Kira L. Barton, Victor Breedveld, Eric M. Vogel, Michael A. Filler   +9 more
wiley   +1 more source

Pulsed DC Sputter Deposition of Stable Turbostratic Boron Nitride Thin Films

Advanced Materials Interfaces, EarlyView.
Boron nitride (BN) films are deposited by sputtering from a boron target. During deposition, a substrate bias voltage is applied between the plasma and the sample, which reduces excess boron in the film and enhances the crystallinity. This process prevents the formation of boric acid and ammonium borate hydrate.
Josef Schätz, Michael Krenzer, Tim Schaffus, Martin Otto, Fabian Kühnel, Fabian Streb, Günther Benstetter, Georg S. Duesberg, Stephan Pindl, Max C. Lemme   +9 more
wiley   +1 more source