Results 81 to 90 of about 25,251 (300)

Quantum Memristors in Quantum Photonics

open access: yes, 2018
We propose a method to build quantum memristors in quantum photonic platforms. We firstly design an effective beam splitter, which is tunable in real-time, by means of a Mach-Zehnder-type array with two equal 50:50 beam splitters and a tunable retarder ...
Lamata, L., Sanz, M., Solano, E.
core   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

open access: yesAdvanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong   +12 more
wiley   +1 more source

Temporal Dynamics Makes Memristive Physical Unclonable Functions More Secure and Ultra‐Lightweight

open access: yesAdvanced Electronic Materials
Memristive physical unclonable function (PUF) is a recent entry to the list of security primitives, employing the intrinsic randomness of memristors. Although this represents a huge opportunity for memristors, all present memristive PUFs suffer from the ...
Yunpeng Guo, Cheng Ma, Huanglong Li
doaj   +1 more source

Boolean and Elementary Algebra with a Roll‐To‐Roll Printed Electrochemical Memristor (Adv. Mater. Technol. 5/2022) [PDF]

open access: bronze, 2022
Benjamin Grant   +5 more
openalex   +1 more source

Organic Electrochemical Transistors for Neuromorphic Devices and Applications

open access: yesAdvanced Materials, EarlyView.
Organic electrochemical transistors are emerging as promising platforms for neuromorphic devices that emulate neuronal and synaptic activities and can seamlessly integrate with biological systems. This review focuses on resultant organic artificial neurons, synapses, and integrated devices, with an emphasis on their ability to perform neuromorphic ...
Kexin Xiang   +4 more
wiley   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

Stochastic compact model for memory and threshold switching memristors

open access: yesAPL Machine Learning
Memristors are electron devices whose resistance changes according to the history of electrical signals applied to their two terminals. These resistance changes can remain for very long times or relax after a short time.
Jordi Suñé, Enrique Miranda
doaj   +1 more source

Lead‐Free Bismuth Halide Perovskite Memristors: Low‐Voltage Switching and Physical Modeling of Resistive Hysteresis

open access: yesAdvanced Materials Technologies, EarlyView.
Lead‐free bismuth halide perovskite memristors exhibit stable low‐voltage resistive switching behavior. The conductance‐activated quasi‐linear memristor model quantitatively reproduces the experimental hysteresis, confirming ion migration‐driven filament dynamics.
So‐Yeon Kim   +4 more
wiley   +1 more source

Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines [PDF]

open access: yes, 2010
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems.
Derek Abbott   +6 more
core  

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