Strategic Review of Arsenide, Phosphide and Nitride MOSFETs [PDF]
Журнал нано- та електронної фізики, 2011 Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2.
Gourab Dutta +3 more
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Vertical field-effect transistors in III-V semiconductors [PDF]
, 1984 Vertical metal-semiconductor field-effect transistors in GaAs/GaAlAs and vertical metal-oxide-semiconductor field-effect transistors (MOSFET's) in InP/GaInPAs materials have been fabricated.
Kapon, E. +5 more
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CMOS Terahertz Metamaterial Based 64 × 64 Bolometric Detector Arrays [PDF]
, 2017 We present two terahertz detectors composed of microbolometer sensors (vanadium oxide and silicon pn diode) and metamaterial absorbers monolithically integrated into a complementary metal oxide semiconductor (CMOS) process.
Cumming, David R.S. +3 more
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Recent Progress on Semiconductor-Interface Facing Clinical Biosensing
Sensors, 2021 Semiconductor (SC)-based field-effect transistors (FETs) have been demonstrated as amazing enhancer gadgets due to their delicate interface towards surface adsorption. This leads to their application as sensors and biosensors.
Mingrui Zhang, Mitchell Adkins, Zhe Wang
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Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs [PDF]
, 2009 We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest ...
A. M. Finkel’stein +5 more
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Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures
Nanotechnology Reviews, 2017 The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In
John Chelliah Cyril R.A. +1 more
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Focused Review on Print‐Patterned Contact Electrodes for Metal‐Oxide Thin‐Film Transistors
Advanced Materials Interfaces, 2023 Metal‐oxide‐semiconductor‐based thin‐film transistors (TFTs) are exploited in display backplanes and X‐ray detectors fabricated by vacuum deposition and lithographic patterning.
Fei Liu +3 more
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Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2021 Present work is devoted to the development of a mathematical model for the forward current-voltage characteristic of Schottky diodes with a metal – oxide – semiconductor (MOS) trench structure, which takes into account the accumulation of the main ...
J. A. Solovjov
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Gongye shui chuliPhotocatalysts are widely used in water pollution treatment，air purification，disease treatment and environmental remediation because of their strong oxidation，high chemical stability，environmentally friendly and non-toxicity.
WANG Ning +5 more
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Static characteristics of CMOS digital circuit based on transition metal dichalcogenide transistors
AIP Advances, 2019 Static characteristics of digital combinational logic circuits and Schmitt triggers based on two-dimensional (2D) transition metal dichalcogenides (TMDs) have been systematically explored.
F. F. Mao +4 more
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