Results 21 to 30 of about 213,422 (311)

Metal Oxides-Based Semiconductors for Biosensors Applications [PDF]

Frontiers in Chemistry, 2020
The present mini review contains a concessive overview on the recent achievement regarding the implementation of a metal oxide semiconductor (MOS) in biosensors used in biological and environmental systems. The paper explores the pathway of enhancing the sensing characteristics of metal oxides by optimizing various parameters such as synthesis methods,
Ionel Şerban, Alexandru Enesca
openaire   +3 more sources

Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon [PDF]

, 2015
Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming.
Baxter R. J., Benjamin F. Bory, Dago M. de Leeuw, Henrique L. Gomes, Paulo R. F. Rocha, Stefan C. J. Meskers   +5 more
core   +3 more sources

Metal Oxide Semi-Conductor Gas Sensors in Environmental Monitoring

Sensors, 2010
Metal oxide semiconductor gas sensors are utilised in a variety of different roles and industries. They are relatively inexpensive compared to other sensing technologies, robust, lightweight, long lasting and benefit from high material sensitivity and ...
George F. Fine, Leon M. Cavanagh, Ayo Afonja, Russell Binions   +3 more
doaj   +1 more source

Magnetic oxide semiconductors

, 2005
Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature.
Ando K, Andrearczyk T, Chambers S A, Chang Y Q, Chien C L, Fukumura T, Giriat W, H Toyosaki, Hong N H, Joh Y G, Kim D S, Kim J H, Kim J H, Kimura H, Kolesnik S, Leiter F, Matsumoto Y, Prellier W, Ren M J, T Fukumura, Tabata H, Toyosaki H Fukumura T Yamada Y Nakajima K Chikyow T Hasegawa T Koinuma H Kawasaki M, Toyosaki H Yamada Y Fukumura T Kawasaki M, Ueda K, Viswanatha R, Wakano T, Y Yamada   +26 more
core   +1 more source

Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides [PDF]

, 2013
Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries.
Estribeau, Magali, Gaillardin, Marc, Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Marcandella, Claude, Martinez, Martial, Paillet, Philippe   +7 more
core   +3 more sources

Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits

Доклады Белорусского государственного университета информатики и радиоэлектроники
The influence of recrystallization of a mechanically damaged layer on the working side of a silicon wafer using rapid heat treatment (1000 °C, 20 s) on the electrical parameters of complementary metal-oxide-semiconductor microcircuits has been ...
U. A. Pilipenka, V. A. Saladukha, H. A. Siarheichyk, D. U. Shestouski   +3 more
doaj   +1 more source

The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device

, 2005
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode.
Chong, Lit Ho, de Groot, C. H., Mallik, Kanad   +2 more
core   +1 more source

An Inkjet‐Printed Platinum‐Based Temperature Sensing Element on Polyimide Substrates

Advanced Engineering Materials, EarlyView.
An inkjet‐printed, meander‐structured, nanoparticle platinum‐based resistive temperature sensors on polyimide substrates are demonstrated as proof‐of‐concept. Optimized sintering at 250°C enables stable conductive structures. The Pt100‐ and Pt1000‐type sensors exhibit linear resistance–temperature characteristics with stable TCR in the 20°C–80°C range,
Shawon Alam, Thomas Kister, Alexander Scholz, Sophie Sauva, Makara Lay, Tobias Kraus, Jasmin Aghassi‐Hagmann   +6 more
wiley   +1 more source

Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron [PDF]

, 1974
Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials.
Danchenko, V.
core   +1 more source

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics [PDF]

, 2016
We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3 ...
C. J. Humphreys, D. Wallis, I. G. Thayne, I. Guiney, J. W. Roberts, K. B. Lee, P. A. Houston, P. R. Chalker, S. J. Cho, Schroder D. K.   +9 more
core   +2 more sources