Results 41 to 50 of about 213,422 (311)

Electrical Conductivities of Conductors, Semiconductors, and Their Mixtures at Elevated Temperatures

open access: yesAdvanced Engineering Materials, EarlyView.
This article presents a comprehensive review of temperature‐dependent electrical conductivity data for multiple material classes at elevated temperatures, highlighting a persistent conductivity gap between metals and semiconductors in the range of 102$\left(10\right)^{2}$– 107$\left(10\right)^{7}$ S/m. Metal–ceramic irregular metamaterials are proposed
Valentina Torres Nieto, Marcia A. Cooper
wiley   +1 more source

Surface Recombination Via Interface Defects in Field Effect Transistors

open access: yesActive and Passive Electronic Components, 1998
Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependent on the energy level and on the operating conditions.
E. Bendada   +3 more
doaj   +1 more source

Resistance Rapid Heating of Aluminum Coatings in an Extreme High Vacuum–Adequate Atmosphere for Hot Stamping

open access: yesAdvanced Engineering Materials, EarlyView.
The subject of this work is the development of a corrosion‐protective coating on steel sheets for form hardening. Rapid heating in an extreme high vacuum (XHV)‐adequate atmosphere is a useful method to prevent oxidation during alloying of 22MnB5 and aluminum to obtain a metallurgical bonding.
Lorenz Albracht   +5 more
wiley   +1 more source

Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

open access: yesNature Communications, 2016
Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a
Gem Shoute   +4 more
doaj   +1 more source

Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures

open access: yesSensors, 2010
The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position.
Chongqi Yu, Hui Wang
doaj   +1 more source

Bias‐Free Highly Efficient and Stable Dye‐Sensitized Photoelectrochemical Cells via Cascade Charge Transfer

open access: yesAdvanced Functional Materials, EarlyView.
A buried‐junction DSPEC design is introduced that leverages cascade charge transfer to enhance efficiency, stability, and versatility. This approach facilitates effective charge transfer and minimizes recombination losses, leading to significant improvements.
Jun‐Hyeok Park   +8 more
wiley   +1 more source

From ligands to binding motifs and beyond; the enhanced versatility of nanocrystal surfaces [PDF]

open access: yes, 2016
Surface chemistry bridges the gap between nanocrystal synthesis and their applications. In this respect, the discovery of complex ligand binding motifs on semiconductor quantum dots and metal oxide nanocrystals opens a gateway to new areas of research ...
De Keukeleere, Katrien   +3 more
core   +1 more source

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

open access: yesAdvanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu   +2 more
wiley   +1 more source

Local mapping of interface traps using contactless capacitance transient technique

open access: yesAIP Advances, 2016
Contactless capacitance transient techniques have been applied to local mapping of interface traps of a semiconductor wafer. In contactless capacitance transient techniques, a Metal-Air gap-Oxide-Semiconductor (MAOS) structure is used instead of a ...
Haruhiko Yoshida, Hidenobu Mori
doaj   +1 more source

A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor

open access: yesMicromachines, 2020
In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found.
Yu-Yang Tsai   +4 more
doaj   +1 more source

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