Results 51 to 60 of about 213,422 (311)

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

A novel PMOS transistors based first-order all-pass network

e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023
In this paper, a new voltage-mode first-order all-pass network is introduced. It is realized by using only four p-channel metal–oxide–semiconductor transistors, one resistor and one capacitor.
Bhartendu Chaturvedi, Jitendra Mohan, Shiv Narain Gupta   +2 more
doaj   +1 more source

Field-effect transistor replaces bulky transformer in analog-gate circuit [PDF]

, 1965
Metal-oxide semiconductor field-effect transistor /MOSFET/ analog-gate circuit adapts well to integrated circuits.

core   +1 more source

Tuning the Dielectric Properties of Individual Clay Nanosheets by Interlayer Composition: Toward Nano‐Electret Materials

Advanced Functional Materials, EarlyView.
The dielectric properties of clays are studied on the level of individual monolayers and functional double stacks. The material breakdown characteristics and charge storage performance are analyzed. For illustration, a defined charge pattern representing a cuneiform character is produced, written into a microscopic clay tile, referencing the origins of
Sebastian Gödrich, Paul Markus, Matthias Stöter, Bernhard Biersack, Rainer Schobert, Josef Breu, Georg Papastavrou   +6 more
wiley   +1 more source

Metal oxide semiconductor-based methane sensing

Carbon Future
Real-time and sensitive detection of methane (CH4) is vital to the safety of life and production due to the explosivity and greenhouse effect of methane.
Renjie Chen, Shuyu Lin, Zhongtian Wang, Yi Xia, Lan Xiang   +4 more
doaj   +1 more source

Effect of Oxide Layer in Metal-Oxide-Semiconductor Systems

MATEC Web of Conferences, 2016
In this work, we investigate the electrical properties of oxide layer in the metal-oxide semiconductor field effect transistor (MOSFET). The thickness of oxide layer is proportional to square root of oxidation time.
Fan Jung-Chuan, Lee Shih-Fong
doaj   +1 more source

A FinFET with one atomic layer channel

Nature Communications, 2020
FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET width to
Mao-Lin Chen, Xingdan Sun, Hang Liu, Hanwen Wang, Qianbing Zhu, Shasha Wang, Haifeng Du, Baojuan Dong, Jing Zhang, Yun Sun, Song Qiu, Thomas Alava, Song Liu, Dong-Ming Sun, Zheng Han   +14 more
doaj   +1 more source

Self‐Assembly of Semiconductor Metal Oxide Nanostructures [PDF]

Journal of Nanomaterials, 2013
1 Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education and College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025, China 2 School of Physics and Technology, University of Jinan, Shandong, Jinan 250022, China 3 School of Materials Science and Engineering, Nanjing University of Science and ...
Xiang Wu, Xijin Xu, Haibo Zeng, Chuanfei Guo   +3 more
openaire   +1 more source

Decoupling Size and Electronic Effects in Doped SrTiO3 Photocatalysts Through Surface Area–Normalized CO2 Hydrogenation Rates

Advanced Functional Materials, EarlyView.
Exploring the photocatalytic reverse water–gas shift (RWGS) reaction on doped SrTiO3 nanoparticle films, reveals that normalizing catalytic rates by the catalyst's specific surface area (SSA) disentangled surface area effects from the catalyst's intrinsic material properties.
Dikshita Bhattacharyya, Baliana Shani, Isaac Holmes‐Gentle, Gerardo T Martinez, Martyn McLachlan, Nicola Seriani, Ludmilla Steier   +6 more
wiley   +1 more source

Impact of fluorine doping on solution-processed In–Ga–Zn–O thin-film transistors using an efficient aqueous route

AIP Advances, 2020
Simple and facile solution-processed thin-film transistors (TFTs) using metal-oxide semiconductors are promising for producing large-area electronics.
Masashi Miyakawa, Mitsuru Nakata, Hiroshi Tsuji, Hiroaki Iino, Yoshihide Fujisaki   +4 more
doaj   +1 more source