Results 61 to 70 of about 213,422 (311)
Ferroelectric field effect transistors: Progress and perspective
APL Materials, 2021 Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration.
Jae Young Kim, Min-Ju Choi, Ho Won Jang
doaj +1 more source
Backbone Heterojunction Photocatalysts for Efficient Sacrificial Hydrogen Production
Advanced Functional Materials, EarlyView.Herein, a ‘single‐component’ organic semiconductor photocatalyst is presented in which a molecular donor is bonded to a polymer acceptor. The resultant material demonstrates exceptional photocatalytic activity for hydrogen evolution in aqueous triethylamine with an outstanding external quantum efficiency of 38% at 420 nm.
Richard J. Lyons +11 more
wiley +1 more source
IEEE Access, 2013 In this paper, a new approach toward the design of a memristor based nonvolatile static random-access memory (SRAM) cell using a combination of memristor and metal-oxide semiconductor devices is proposed. Memristor and MOSFETs of the Taiwan Semiconductor
Syed Shakib Sarwar +3 more
doaj +1 more source
Injection photodiods based on metal oxide semiconductors
Moldavian Journal of the Physical Sciences, 2020 A brief review of our recent research on injection photodiodes based on metal oxide semiconductors deposited onto Si substrates is presented. A series of ZnSnO, NiO, and Zn1-xMgxO thin films are prepared by aerosol spray pyrolysis deposition or sol–gel spin coating on Si substrates with a post-deposition thermal treatment in air at a temperature of ...
Morari, Vadim +3 more
openaire +2 more sources
Evidence for multiple impurity bands in sodium-doped silicon MOSFETs
, 2006 We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer.
C. H. W. Barnes +9 more
core +1 more source
Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior [PDF]
, 2014 Metal and oxide distribution in diamond metal–oxide– semiconductor (MOS) structures are characterized using several transmission electron microscopy (TEM) modes at nanometric scale.
Chen +15 more
core +4 more sources
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Advanced Functional Materials, EarlyView.Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source
Micromachines, 2020 In this paper, microchip exploding foil initiators were fabricated by micro-electro-mechanical system scale fabrication methods, such as magnetron sputtering, photolithography, and chemical vapor deposition.
Ke Wang +5 more
doaj +1 more source
MOSFET analog memory circuit achieves long duration signal storage [PDF]
, 1966 Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches ...
core +1 more source
Advanced Functional Materials, EarlyView.This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim +7 more
wiley +1 more source