Results 71 to 80 of about 213,422 (311)
AIP AdvancesIn this paper, we present the study of charge-trapping effects in ultra-low current metal–oxide–semiconductor–oxide–semiconductor structures. We fabricated the Al/SiOx/a-Si/SiOx/n++ Si devices using low-temperature processes with various oxide ...
Piotr Wiśniewski +2 more
doaj +1 more source
Advances in Mechanical Engineering, 2017 The power metal oxide semiconductor field effect transistor is used extensively in analog circuits and digital circuits. However, it is also the highest failure rate component in the power electronics system.
Lifeng Wu +3 more
doaj +1 more source
Laser activated MTOS microwave device [PDF]
, 1985 A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors.
Maserjian, J.
core +1 more source
Photonic Engineering Enables All‐Passive Upconversion Imaging with Low‐Intensity Near‐Infrared Light
Advanced Functional Materials, EarlyView.A passive upconversion imaging system enables the observation of scenes illuminated by low‐intensity incoherent near‐infrared light from 750 to 930 nm, by converting it into the visible without the use of external power. The upconverter is enabled by triplet–triplet annihilation in a bulk heterojunction, with absorption enhanced by plasmonic resonators
Rabeeya Hamid +13 more
wiley +1 more source
The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook [PDF]
The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described.
Bouldin, D. L. +4 more
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Complementary-MOS binary counter with parallel-set inputs [PDF]
, 1970 Metal oxide semiconductor four-stage binary counter contains reset capability as well as four parallel-set inputs gated in by a logic signal.
Keller, K. R., Yung, A. K.
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Advanced Functional Materials, EarlyView.Molecular engineering of a nonconjugated radical polymer enables a significant enhancement of the glass transition temperature. The amorphous nature and tunability of the polymer, arising from its nonconjugated backbone, facilitates the fabrication of organic memristive devices with an exceptionally high yield (>95%), as well as substantial ...
Daeun Kim +14 more
wiley +1 more source
Active and Passive Electronic Components, 2012 In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics.
J. H. Yum +5 more
doaj +1 more source
Radiation tolerant silicon nitride insulated gate field effect transistors [PDF]
, 1969 Metal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance.
Newman, P. A.
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In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
Advanced Functional Materials, EarlyView.In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source