Results 21 to 30 of about 2,771 (177)

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

AIP Advances, 2022
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth
Daniela Gogova, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul Hassan, Axel R. Persson, Per O. Å. Persson, Olof Kordina, Bo Monemar, Matthew Hilfiker, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva   +13 more
doaj   +1 more source

Direct hard X-ray photodetector with superior sensitivity based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition

Materials Today Advances, 2023
In this work, we have fabricated a highly sensitive direct irradiating X-ray photodetector (DXPD) based on Zinc Gallium Oxide (ZnGa2O4) epilayers with a metal-semiconductor-metal structure. The ZnGa2O4 epilayers were grown on a c-plane sapphire substrate
Siddharth Rana, Shang-Jui Chiu, Chih-Yang Huang, Fu-Gow Tairtan, Yan-Gu Lin, Dong-Sing Wuu, Jitendra Pratap Singh, Guang-Cheng Su, Po-Liang Liu, Ray-Hua Horng   +9 more
doaj   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Wafer Scale III‐Nitride Deep‐Ultraviolet Vertical‐Cavity Surface‐Emitting Lasers Featuring Nanometer‐Class Control of Cavity Length

Advanced Science, EarlyView.
A DUV‐VCSEL strategy featuring the nanometer‐class control of the cavity length is proposed in the DUV optoelectronic framework based on GaN templates. After the sapphire removal, a self‐terminated etching technology is developed, whereby the cavity length can be accurately determined by epitaxy instead of the fabrication process. As such, a record low
Chen Ji, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Ziyao Zhang, Fuyun Tan, Chengzhi Ji, Junchuan Zhang, Erfei Zhang, Xiangning Kang, Zhixin Qin, Guangxu Ju, Jiejun Wu, Xuelin Yang, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen   +18 more
wiley   +1 more source

Emerging Device Applications From Strong Light–Matter Interactions in 2D Materials

Advanced Science, EarlyView.
Two‐dimensional semiconductors enable extremely compact optoelectronic devices such as solar cells, sensors, LEDs, and lasers. Their strong light–matter interactions allow efficient light emission, detection, and energy conversion. This review article discusses the recent progress in integrating these materials with optical cavities and nanostructures ...
Janani Archana K, Kumar Shwetabh, Reyas Ali, Ramji Velayutham, Koustav Das, Abhishek Mondal, Prashant Kumar, Surendra B. Anantharaman   +7 more
wiley   +1 more source

Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping

Applied Physics Express
In this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. The Al-rich growth/doping conditions in the pulsed MOCVD process resulted in n-AlN layers with transmission line model ...
Tariq Jamil, Abdullah Al Mamun Mazumder, Mafruda Rahman, Muhammad Ali, Jingyu Lin, Hongxing Jiang, Grigory Simin, Asif Khan   +7 more
doaj   +1 more source

MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

International Journal of Photoenergy, 2014
We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application.
Amornrat Limmanee, Patipan Krudtad, Sasiwimon Songtrai, Suttinan Jaroensathainchok, Taweewat Krajangsang, Jaran Sritharathikhun, Kobsak Sriprapha   +6 more
doaj   +1 more source

Metal–organic chemical vapor deposition of 2D van der Waals materials—The challenges and the extensive future opportunities

APL Materials, 2020
The last decade has witnessed significant progress in two-dimensional van der Waals (2D vdW) materials research; however, a number of challenges remain for their practical applications.
Do Hee Lee, Yeoseon Sim, Jaewon Wang, Soon-Yong Kwon   +3 more
doaj   +1 more source

Engineered Strain in 2D Materials by Direct Growth on Deterministically Patterned Grayscale Topographies

Advanced Science, EarlyView.
ABSTRACT Strain is a proven technique for modifying the bandgap and enhancing carrier mobility in 2D materials. Most current strain engineering techniques rely on the post‐growth transfer of these atomically thin materials from growth substrates to target surfaces, limiting their integration into nanoelectronics.
Berke Erbas, Arindam Bala, Hernan Furci, Anushree Dutta, Naresh Kumar, Renato Zenobi, Giovanni Boero, Andras Kis, Juergen Brugger   +8 more
wiley   +1 more source