Results 11 to 20 of about 156,764 (197)
Highly Stretchable MoS$_2$ Kirigami [PDF]
, 2015 We report the results of classical molecular dynamics simulations focused on studying the mechanical properties of MoS$_{2}$ kirigami. Several different kirigami structures were studied based upon two simple non-dimensional parameters, which are related ...
Campbell, David K. +3 more
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Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
IEEE Journal of the Electron Devices Society, 2017 A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed.
Sung-Min Hong, Junsung Park
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Metal oxide semiconductor-based Schottky diodes: a review of recent advances
Materials Research Express, 2020 Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
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A method for the measurement of the turn-on condition in MOS transistors [PDF]
, 1971 Metal-oxide-silicon (MOS) integrated circuits usually consist of MOS transistors and interconnections. Both, interconnections and MOS transistors are built up of diffused regions in the bulk substrate and conductive strips (metal or polycrystalline ...
Wallinga, H.
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Stimulation in fullerene for adsorbing pollutant gases: A review
Chemical Physics Impact, 2023 The catalytic activities of fullerene are affected largely by different shapes and surface arrangements influencing catalyst activity and stability a lot. Surface structures of metal oxides (MOs) adsorbed on surfaces of C60-fullerene can show gas sensing
Pratibha S Agrawal +4 more
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Graphene on transition-metal dichalcogenides: a platform for proximity spin-orbit physics and optospintronics [PDF]
, 2015 Hybrids of graphene and two dimensional transition metal dichalcogenides (TMDC) have the potential to bring graphene spintronics to the next level. As we show here by performing first-principles calculations of graphene on monolayer MoS$_2$, there are ...
Fabian, Jaroslav, Gmitra, Martin
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Communications, 2014 The set of MOS structures formed on n-type Si substrate with (NAOS)-SiO2/HfO2 gate dielectric layers was prepared and annealed in N2 atmosphere at various temperatures to stabilize the structure and to decrease the interface states density.
Peter Bury +5 more
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Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures [PDF]
, 1999 Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacitance–voltage measurements on metal-oxide-semiconductor (MOS)-gated enhancement mode structures have been used to deduce Hall scattering factors, rH, in the
Lander, Robert James Pascoe +4 more
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Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2
Nanomaterials, 2020 Antimonene is found to be a promising material for two-dimensional optoelectronic equipment due to its broad band gap and high carrier mobility. The van der Waals heterostructure, as a unique structural unit for the study of photoelectric properties, has
Congcong Zhou, Xiaodan Li, Taotao Hu
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Temperature influences of the interfacial layer in MOS (Pt/TiO2/Si) structures
Конденсированные среды и межфазные границы, 2023 In this paper present I-V and C-V electrical characteristics of MOS (Pt/TiO2/Si) were reported. In the I-V characteristics the various electric parameter estimated such as the ideality factor (n), barrier height (FB), leakage current (Ic) and saturation
H. D. Chandrashekara, P. Poornima
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