Results 21 to 30 of about 156,764 (197)
Effect of size and position of gold nanocrystals embedded in gate oxide of SiO2/Si MOS structures [PDF]
The influence of single and double layered gold (Au) nanocrystals (NC), embedded in SiO2 matrix, on the electrical characteristics of metal–oxide–semiconductor (MOS) structures is reported in this communication.
Chaitali Chakraborty, Chayanika Bose
doaj +1 more source
Mechanical and Electronic Properties of MoS$_2$ Nanoribbons and Their Defects [PDF]
We present our study on atomic, electronic, magnetic and phonon properties of one dimensional honeycomb structure of molybdenum disulfide (MoS$_2$) using first-principles plane wave method. Calculated phonon frequencies of bare armchair nanoribbon reveal
Akturk E. +89 more
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Heteronanostructural metal oxide-based gas microsensors
The development of high-performance, portable and miniaturized gas sensors has aroused increasing interest in the fields of environmental monitoring, security, medical diagnosis, and agriculture. Among different detection tools, metal oxide semiconductor
Lin Liu +7 more
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Dielectric Properties and Breakdown of the Gate Oxide in the MOS Structure
The article treats the methodology of measuring the breakdown voltage on Si-based MOS structures. Identification of defects in the thin gate oxide is performed using the Weibull statistical analysis.
Ladislav Harmatha +2 more
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Experimental and theoretical study of ultra-thin oxides [PDF]
We report on an experimental and theoretical study of transport through thin oxides. The experimental study was carried out on the tunnel switch diode (TSD) which consists of an MOS junction on top of a pn junction.
Daniel, E. S. +2 more
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Radiation Hardness of Mos Structures Exposed to High-Energy Ions
MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm2 and 1010 cm2 were investigated by capacitance measuring methods (C-V, C-t), completed by quasistatic low-frequency C-V and DLTS measurements.The irradiated MOS ...
Ladislav Harmatha +2 more
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This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon ...
Nesheva Diana +9 more
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The objective of this study is to investigate the synthesis and influence of MoS2 on carbon nanowalls (CNWs) as supercapacitor electrodes. The synthesis of MoS2 on CNW was achieved by the introduction of hydrogen remote plasma from ammonium ...
Jin-Ha Shin +2 more
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MoS2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness
Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices.
Jinbing Cheng +7 more
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Quantum transport through MoS$_2$ constrictions defined by photodoping
We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS$_2$) constrictions using photodoping. The devices are based on van-der-Waals heterostructures where few-layer MoS$_2$ flakes are partially encapsulated by ...
Banszerus, Luca +8 more
core +1 more source

