Results 31 to 40 of about 156,764 (197)

Si/SiC bonded wafer: a route to carbon free SiO2 on SiC [PDF]

, 2009
This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor (MOS) devices with lower interface state densities (Dit ...
A. Pérez-Tomás, J. A. Covington, J. Llobet, Lu C. -Y., M. C. Davis, M. Lodzinski, M. Placidi, M. R. Jennings, Nicollian E. H., O. J. Guy, P. A. Mawby, P. M. Gammon, S. E. Burrows, Saddow S., Tong Q. Y.   +14 more
core   +1 more source

MoS₂@ZnO Nanoheterostructures Prepared by Electrospark Erosion for Photocatalytic Applications

Nanomaterials, 2021
MoS2@ZnO nanoheterostructures were synthesized by electrospark erosion of zinc granules in a hydrogen peroxide solution and simultaneous addition of MoS2 nanostructured powder into the reaction zone.
Vladimir An, Herman Potgieter, Natalia Usoltseva, Damir Valiev, Sergei Stepanov, Alexey Pustovalov, Arsenii Baryshnikov, Maksim Titov, Alesya Dolinina   +8 more
doaj   +1 more source

Optical spectroscopy of interlayer coupling in artificially stacked MoS2 layers

, 2015
We perform an optical spectroscopy study to investigate the properties of different artificial MoS$_2$ bi- and trilayer stacks created from individual monolayers by a deterministic transfer process.
Castellanos-Gomez, A., Korn, T., Mooshammer, F., Plechinger, G., Schüller, C., Steele, G. A.   +5 more
core   +1 more source

MoS₂-Carbon Inter-overlapped Structures as Effective Electrocatalysts for the Hydrogen Evolution Reaction

Nanomaterials, 2020
The ability to generate hydrogen in an economic and sustainable manner is critical to the realization of a future hydrogen economy. Electrocatalytic water splitting into molecular hydrogen using the hydrogen evolution reaction (HER) provides a viable ...
Po-Chia Huang, Chia-Ling Wu, Sanjaya Brahma, Muhammad Omar Shaikh, Jow-Lay Huang, Jey-Jau Lee, Sheng-Chang Wang   +6 more
doaj   +1 more source

DC-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO$_2$ interfaces [PDF]

, 1998
The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation at weakly nonlinear buried Si(001)-SiO$_2$ interfaces is studied experimentally in planar Si(001)-SiO$_2$-Cr MOS structures by optical second-harmonic generation (SHG ...
A. A. Fedyanin, A. N. Rubtsov, A. Nahata, A. V. Melnikov, A. W. Stephens, B. S. Mendoza, B. S. Mendoza, C. G. B. Garrett, C. H. Bjorkman, C. H. Lee, C. K. Chen, C. Kittel, C. Meyer, C. Ohlhoff, C. W. van Hasselt, C. W. van Hasselt, D. E. Aspnes, E. D. Mishina, G. L. Richmond, J. Bloch, J. E. Sipe, J. E. Sipe, J. F. McGilp, J. I. Dadap, J. I. Dadap, J. I. Dadap, J. I. Dadap, J. I. Dadap, J. I. Dadap, J. L. Daschbach, J. M. Lantz, J. Miragliotta, J. Qi, J. Qi, J. R. Power, K. Pedersen, M. C. Downer, M. Cardona, M. H. Anderson, M. ter Beek, N. Bloembergen, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, O. A. Aktsipetrov, P. Bratu, P. Godefroy, P. Guyot-Sionnest, P. R. Fischer, P. T. Wilson, P. T. Wilson, P. Thiansathaporn, R. H. Kingston, R. M. Corn, R. W. Kempf, T. Ando, T. F. Heinz, W. Daum, X. F. Hu, Y. R. Shen, Z. Xu   +71 more
core   +2 more sources

Gate dielectrics: process integration issues and electrical properties

Journal of Telecommunications and Information Technology, 2005
In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures ...
Udo Schwalke
doaj   +1 more source

Plasmonic optoelectronic devices and metasurfaces [PDF]

EPJ Web of Conferences
We report recent progress on optoelectronic devices and metasurfaces involving surface plasmons, enabled by metal-oxide-semiconductor (MOS) structures on Si and on epsilon-near-zero materials.
Berini Pierre
doaj   +1 more source

Preparation of Few-Layered Wide Bandgap MoS2 with Nanometer Lateral Dimensions by Applying Laser Irradiation

Crystals, 2020
In this study, we report a new method for the quick, green, and one-step preparation of few-layered molybdenum disulfide (MoS2) nanosheets with wide bandgap.
Mitra Mahdavi, Salimeh Kimiagar, Fahimeh Abrinaei   +2 more
doaj   +1 more source

Recent Progress of Electrode Architecture for MXene/MoS₂ Supercapacitor: Preparation Methods and Characterizations

Micromachines, 2022
Since their discovery, MXenes have conferred various intriguing features because of their distinctive structures. Focus has been placed on using MXenes in electrochemical energy storage including a supercapacitor showing significant and promising ...
Muhammad Akmal Kosnan, Mohd Asyadi Azam, Nur Ezyanie Safie, Rose Farahiyan Munawar, Akito Takasaki   +4 more
doaj   +1 more source

General theoretical description of angle-resolved photoemission spectroscopy of van der Waals structures

, 2018
We develop a general theory to model the angle-resolved photoemission spectroscopy (ARPES) of commensurate and incommensurate van der Waals (vdW) structures, formed by lattice mismatched and/or misaligned stacked layers of two-dimensional materials.
Amorim, B.
core   +1 more source