Results 171 to 180 of about 194,360 (332)

The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

IEEE Transactions on Electron Devices, 2017
Richard K. Williams, M. Darwish, R. Blanchard, R. Siemieniec, P. Rutter, Y. Kawaguchi   +5 more
semanticscholar   +1 more source

Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices. [PDF]

Sci Adv
Zhou H, Zhou M, Xiang M, Gong H, Gao G, Wang C, Zhang Y, Dang K, Liu Z, Zhang J, Zhang H, Wang Y, Wang H, Si M, Zhang Y, Hao Y, Zhang J.   +16 more
europepmc   +1 more source

Two-dimensional numerical analysis for the electrical characteristics of Si/Strained Si_(1-x)Ge_x/Si hetero-junction-on-insulator p-MOSFET

, 2015
Mingxuan Yang
openalex   +1 more source

Comparative analysis of basic transport properties in the inversion layer of bulk and SOI MOSFETs: a Monte-Carlo study

, 2004
Luca Lucci, David Esseni, Pierpaolo Palestri, L. Selmi   +3 more
openalex   +2 more sources

Charge Trapping Effects on n-MOSFET Current Mirrors Under TID Radiation. [PDF]

Micromachines (Basel)
Aguir D, Amor S, Francis LA, Machhout M.
europepmc   +1 more source

Attempting Continuous Operation at 300 °C for an Amplification Circuit Using a Diamond Mosfet

Hiroki Fukushima, Shuzo Idenawa, Yuhei Seki, A. Okuno, Tadashi Masumura, Hitoshi Umezawa, Yasuhito Matsubayashi, M. Sohma, Jun Akedo, Mikio Higuchi, Yosuke Ito, Naohisa Hoshikawa, Junich H. Kaneko   +12 more
openalex   +1 more source

Optimized Laboratory Maintenance and Functional Testing of Chara braunii. [PDF]

Curr Protoc
Kurtović K, Petrášek J, Vosolsobě S.
europepmc   +1 more source

III–V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications

, 2020
Fredrik Lindelöw, Navya Sri Garigapati, Lasse Södergren, Mattias Borg, Erik Lind   +4 more
openalex   +1 more source

Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C-V Investigation. [PDF]

Micromachines (Basel)
Ackermann V, El Amrani M, Mohamad B, Ben Abbes R, Charles M, Cavalaglio S, Manrique M, Buckley J, Salem B.   +8 more
europepmc   +1 more source

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

, 2004
Shiyang Zhu, H.Y. Yu, J.D. Chen, S. J. Whang, J.H. Chen, Chen Shen, Chunxiang Zhu, S.J. Lee, M.F. Li, D.S.H. Chan, Won Jong Yoo, Anyan Du, C. H. Tung, Jagar Singh, Albert Chin, Dim‐Lee Kwong   +15 more
openalex   +2 more sources