Reply to: Bias-induced electrostatic magnetoresistance in ferromagnet/chiral systems. [PDF]
Nat CommunZhao Y, Zhang K, Xiao J, Sun K, Yan B.
europepmc +1 more source
Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation. [PDF]
Sensors (Basel)Bianchini C +3 more
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A method of extracting switching loss from a high efficiency MOSFET based half bridge converter [PDF]
, 2003 David Finn +2 more
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Modeling of interelectrode parasitic elements of V-groove SiC MOSFET
, 2018 Rui Zhou +3 more
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A new coupled-inductor-free bidirectional DC-DC converter with low current ripple in both sides. [PDF]
Sci RepSharifi S, Delshad M.
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Analysis of Superjunction MOSFET (CoolMOS<sup>TM</sup>) Concept Limitations-Part II: Simulations. [PDF]
Materials (Basel)Lisik Z, Podgórski J.
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Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors. [PDF]
Micromachines (Basel)Bao M, Wang Y, Yang J, Li X.
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Electro-Thermal Modelling and Simulation of a Power MOSFET
, 2001 Željko Jakopović +2 more
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Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes. [PDF]
Micromachines (Basel)Liu L, Pang B, Li S, Zhen Y, Li G.
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