Results 221 to 230 of about 157,312 (300)

A Non-Segmented PSpice Model of SiC mosfet With Temperature-Dependent Parameters

IEEE transactions on power electronics, 2019
A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect transistor (SiC mosfet) with temperature-dependent parameters is proposed in this paper, which can improve the model's convergence and temperature characteristics. The
Hong Li, Xingran Zhao, K. Sun, Zhengming Zhao, Guoen Cao, T. Zheng   +5 more
semanticscholar   +1 more source

2D analytical modeling and simulation of dual material DG MOSFET for biosensing application

AEU - International Journal of Electronics and Communications, 2019
In the recent times, the performance of MOSFET in the nanoscaled region attains improvisations through several alternative device structures. Amongst many advanced MOSFET structures, the Double Gate (DG) MOSFET is one such structure which mitigates short
B. Buvaneswari, N. Balamurugan
semanticscholar   +1 more source

Embedding Mosfets

Electric and Hybrid Vehicle Technology International, 2019
A new technology that uses chip embedding of power MOSFETs in PCBs can meet increasing requirements for electrical power management systems
openaire   +2 more sources

Comparative Study on Multiple Degrees of Freedom of Gate Drivers for Transient Behavior Regulation of SiC MOSFET

IEEE transactions on power electronics, 2018
Because of fast switching speeds and inevitable stray parameters, the efficiency, security, and stability properties of SiC mosfets in practice are challenged by voltage and current ringing and overshoot. In this paper, the turn-on and off behavior of an
Zheng Zeng, Xiaoling Li
semanticscholar   +1 more source

Assessment of 10 kV, 100 A Silicon Carbide mosfet Power Modules

IEEE transactions on power electronics, 2018
This paper presents a thorough characterization of 10 kV SiC mosfet power modules, equipped with third-generation mosfet chips and without external free-wheeling diodes, using the inherent SiC mosfet body-diode instead. The static performance (e.g., IDS–
D. Johannesson, M. Nawaz, K. Ilves
semanticscholar   +1 more source

Advancement and challenges in MOSFET scaling

, 2021
R. K. Ratnesh, A. Goel, G. Kaushik, H. Garg, Chandan, M. Singh, B. N. Prasad   +6 more
semanticscholar   +1 more source

Recent Technological Advancement in Surrounding Gate MOSFET for Biosensing Applications - a Synoptic Study

Silicon, 2021
Amit Das, Sonam Rewari, B. Kanaujia, R. Gupta   +3 more
semanticscholar   +1 more source

Failure modes and mechanism analysis of SiC MOSFET under short-circuit conditions

Microelectronics and reliability, 2018
The preliminary characterization study and analysis of the short-circuit (SC) capability of SiC MOSFET have been reported in recent years. However, the failure modes of the SiC MOSFET under various SC conditions and their physical mechanisms are unclear.
Xi Jiang, Jun Wang, Jiwu Lu, Jianjun Chen, Xin Yang, Zongjian Li, Chun Tu, Z. J. Shen   +7 more
semanticscholar   +1 more source

Clinical dosimetry using mosfets

International Journal of Radiation Oncology*Biology*Physics, 1997
The use of metal oxide-silicon field effect transistors (MOSFETs) as clinical dosimeters is demonstrated for a number of patients with targets at different clinical sites.Commercially available MOSFETs were characterized for energy response, angular dependency of response, and effect of accumulated dose on sensitivity and some inherent properties of ...
R, Ramani, S, Russell, P, O'Brien
openaire   +2 more sources

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2014
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openaire   +1 more source