Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. [PDF]
Yu M, Shen Y, Ma H, Zhang Q.
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SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance. [PDF]
Wang Z +7 more
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Defect-Mediated Threshold Voltage Tuning in β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs via Fluorine Plasma Treatment. [PDF]
Wang L +8 more
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1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]
Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
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Fundamentals of 1/f noise reduction technique based on complementary cascode switching applied to a 52 microwatts 5.2pJ/bit 100Kb/s 120 GHz receiver. [PDF]
Sanduleanu M.
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Ultrathin Gallium Oxide as Both Surface Passivation Layer with Conductive Filament Contacts and Alternative Gate Dielectric for 2D MOSFETs. [PDF]
Moon S, Kim J.
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Analysis of Superjunction MOSFET (CoolMOS™) Concept Limitations-Part I: Theory. [PDF]
Lisik Z, Podgórski J.
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Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC. [PDF]
Shen Y +16 more
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Comparison of Effective Dose From Intraoperative 3D Imaging Using Mobile and Fixed C-Arms Versus Computed Tomography When Evaluating the Lumbar Spine. [PDF]
Stadthalter H +5 more
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Theoretical analysis of MWCNT and MXene/High-k pH BioFET sensors for biomedical applications. [PDF]
Dhiman G, Routray A.
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