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Temperature control board design and validation for skipper-CCD sensors using a buck converter. [PDF]

HardwareX
Barrientos M, Barrientos M, Rodas J, Renault A, Romero C, Palacios F, Chavez C, Botti AM.   +7 more
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Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

IEEE Transactions on Power Electronics, 2019
The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-/low-voltage and high-power applications.
Lei Zhang, Xibo Yuan, Xiaojie Wu
exaly   +2 more sources

Practical Design Considerations for a Si IGBT + SiC MOSFET Hybrid Switch: Parasitic Interconnect Influences, Cost, and Current Ratio Optimization

IEEE Transactions on Power Electronics, 2019
In this paper, a hybrid switch (HyS) consisting of a large current rated Si insulated-gate bipolar transistor (IGBT) device connected in parallel with a small current rated SiC MOSFET device (low SiC/Si current ratio below unity) is proposed for high ...
Amol Deshpande, Fang Luo
exaly   +2 more sources

A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon

Nature Electronics, 2021
Clarissa Convertino, Cezar B Zota, Heinz Schmid   +2 more
exaly   +2 more sources

Advancement and challenges in MOSFET scaling

Materials Science in Semiconductor Processing, 2021
Ratneshwar Kumar Ratnesh, Chandan
exaly   +2 more sources

Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules

IEEE transactions on power electronics, 2021
Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC MOSFETs) are widely used in higher power density and higher efficiency power electronic applications as a new solution.
Yang Wen, Yuan Yang, Yong Gao
semanticscholar   +1 more source

Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction

IEEE transactions on power electronics, 2021
The online junction temperature monitoring of power devices is a viable technique to ensure the reliable operation of mission-critical power electronic converters.
Xi Jiang, Jun Wang, Hengyu Yu, Jianjun Chen, Zhong Zeng, Xin Yang, Z. Shen   +6 more
semanticscholar   +1 more source

A review on performance comparison of advanced MOSFET structures below 45 nm technology node

Journal of Semiconductors, 2020
CMOS technology is one of the most frequently used technologies in the semiconductor industry as it can be successfully integrated with ICs. Every two years the number of MOS transistors doubles because the size of the MOSFET is reduced.
Namrata Mendiratta, S. Tripathi
semanticscholar   +1 more source

A SiC MOSFET and Si IGBT Hybrid Modular Multilevel Converter With Specialized Modulation Scheme

IEEE transactions on power electronics, 2020
The utilization of silicon carbide (SiC) MOSFET instead of silicon (Si) IGBT can significantly improve the performance of many converters. However, a modular multilevel converter (MMC) completely based on the SiC MOSFET suffers from high cost and high ...
Tianxiang Yin, Chenxing Xu, Lei Lin, Kaiyuan Jing   +3 more
semanticscholar   +1 more source

SiC MOSFETs

2020
Modern switching components for energy processing widely consist of active semiconductor devices in Si, a mature and well-established technology that is reaching its physical limits. The main limitations of Si concern the blocking voltage capability, the switching frequency, and the operating temperature.
Maresca L., Borghese A., Romano G., Fayyaz A., Riccio M., Breglio G., Castellazzi A., Irace A.   +7 more
openaire   +2 more sources