Results 161 to 170 of about 5,284 (228)

Cryo-SIMPLY: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing. [PDF]

Nanomaterials (Basel)
Moposita T, Garzón E, Teman A, Lanuzza M.   +3 more
europepmc   +1 more source

Progress of emerging non-volatile memory technologies in industry. [PDF]

MRS Commun
Hellenbrand M, Teck I, MacManus-Driscoll JL.   +2 more
europepmc   +1 more source

Retraction notice to "Psychological states of Bangladeshi people four months after the COVID-19 pandemic: An online survey" [Heliyon 6 (2020) e05057]. [PDF]

Heliyon
Zubayer AA, Rahman ME, Islam MB, Babu SZD, Rahman QM, Bhuiyan MRAM, Khan MKA, Chowdhury MAU, Hossain L, Habib RB.   +9 more
europepmc   +1 more source

Stochastic Neuromorphic Computing Architecture Based on Voltage-Controlled Probabilistic Switching Magnetic Tunnel Junction (MTJ) Devices. [PDF]

Micromachines (Basel)
Gao L, Wang C, Jiang Y.
europepmc   +1 more source

Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory. [PDF]

Sci Technol Adv Mater
Kumar D, Ishibashi M, Roy T, Tsujikawa M, Shirai M, Mizukami S.   +5 more
europepmc   +1 more source

Impact of Annealing on Perpendicular Magnetic Anisotropy and Interfacial Diffusion in Ultrathin [CoFeB/Pd]×n Multilayer Film. [PDF]

Nanomaterials (Basel)
Saravanan L, Kumar MP, Ravikumar A, Murugadoss G, Rodríguez-Suárez R, Vojkovic S, Prabhu D, Peera SG, Garcia C.   +8 more
europepmc   +1 more source

Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling. [PDF]

Sci Rep
Jørstad NP, Pruckner B, Goes W, Selberherr S, Sverdlov V.   +4 more
europepmc   +1 more source

Temperature Gradients as a Data Storage Principle. [PDF]

Entropy (Basel)
Schoenmaker J, Martins PG, Teixeira JC.
europepmc   +1 more source

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Recent Progresses in STT-MRAM and SOT-MRAM for Next Generation MRAM

2020 IEEE Symposium on VLSI Technology, 2020
In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies.
Ikeda Shoji, Koichi Nishioka, Tetsuo Endoh   +2 more
exaly   +2 more sources

R-MRAM: A ROM-Embedded STT MRAM Cache

IEEE Electron Device Letters, 2013
We present a new spin-transfer torque magnetic random access memory (STT MRAM) bit-cell that is embedded with read-only memory (ROM) functionality. The proposed ROM-embedded STT MRAM (R-MRAM) bit-cells include one extra bit-line. ROM data is stored by selectively connecting the magnetic tunnel junction (MTJ) to one of the two bit-lines.
Xuanyao Fong, Kaushik Roy, Dongsoo Lee
exaly   +2 more sources