Results 181 to 190 of about 4,026 (228)
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R-MRAM: A ROM-Embedded STT MRAM Cache
IEEE Electron Device Letters, 2013We present a new spin-transfer torque magnetic random access memory (STT MRAM) bit-cell that is embedded with read-only memory (ROM) functionality. The proposed ROM-embedded STT MRAM (R-MRAM) bit-cells include one extra bit-line. ROM data is stored by selectively connecting the magnetic tunnel junction (MTJ) to one of the two bit-lines.
Dongsoo Lee +2 more
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Electrical Modeling of STT-MRAM Defects
2018 IEEE International Test Conference (ITC), 2018 Spin-transfer-torque magnetic RAM (STT-MRAM) is one of the most promising emerging memory technologies. As various manufacturing vendors make significant efforts to push it to the market, appropriate STT-MRAM testing is of great importance. In this paper, we demonstrate that conventional STT-MRAM defect modeling, which is based on linear resistors, is ...
Lizhou Wu +4 more
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Write Disturbance Modeling and Testing for MRAM
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2008 The magnetic random access memory (MRAM) is considered one of the potential candidates that will replace current on-chip memories (RAM, EEPROM, and flash memory) in the future. The MRAM is fast and does not need a high supply voltage for read/write operations, and is compatible with the CMOS technology.
Chin-Lung Su +7 more
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Recent Progresses in STT-MRAM and SOT-MRAM for Next Generation MRAM
2020 IEEE Symposium on VLSI Technology, 2020In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies.
Tetsuo Endoh +3 more
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IEEE Transactions on Circuits and Systems II: Express Briefs, 2021
This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance.
Taehui Na +2 more
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This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance.
Taehui Na +2 more
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ACM Journal on Emerging Technologies in Computing Systems, 2016
In this work, we have studied two novel techniques to enhance the performance of existing geometry-based magnetoresistive RAM physically unclonable function (MRAM PUF). Geometry-based MRAM PUFs rely only on geometric variations in MRAM cells that generate preferred ground state in cells and form the basis of digital signature generation.
Jayita Das, Kevin Scott, Sanjukta Bhanja
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In this work, we have studied two novel techniques to enhance the performance of existing geometry-based magnetoresistive RAM physically unclonable function (MRAM PUF). Geometry-based MRAM PUFs rely only on geometric variations in MRAM cells that generate preferred ground state in cells and form the basis of digital signature generation.
Jayita Das, Kevin Scott, Sanjukta Bhanja
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Design considerations for MRAM
IBM Journal of Research and Development, 2006MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations.
Thomas M. Maffitt +8 more
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2014 International Test Conference, 2014
Magnetic Random Access Memory (MRAM) is a new technology which offers a viable alternative to other forms of nonvolatile memory, such as flash, where read access time, writing speed, and cell endurance is at a premium. Difficulties in scaling DRAM below the 32nm node may make MRAM a suitable candidate for DRAM replacement.
Raphael Robertazzi +2 more
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Magnetic Random Access Memory (MRAM) is a new technology which offers a viable alternative to other forms of nonvolatile memory, such as flash, where read access time, writing speed, and cell endurance is at a premium. Difficulties in scaling DRAM below the 32nm node may make MRAM a suitable candidate for DRAM replacement.
Raphael Robertazzi +2 more
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Probabilistically Programmed STT-MRAM
IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2012Novel memory programming methods and corresponding memory structures are presented in this paper. Unlike conventional memory programming, this programming technique does not require deterministic switching of memory elements. This technique explicitly exploits the probabilistic switching characteristics of memory elements such as spin-transfer torque ...
Wenqing Wu +4 more
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Records of the IEEE International Workshop on Memory Technology, Design and Testing, 2002
Memories using any type of on-chip magnetic memory elements (often known as MRAM) sometimes suffer from unstable magnetic domains within the memory bits. These states may occur because of improper bit manufacturing techniques or transient magnetic fields generated on or off chip.
Ruili Zhang +2 more
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Memories using any type of on-chip magnetic memory elements (often known as MRAM) sometimes suffer from unstable magnetic domains within the memory bits. These states may occur because of improper bit manufacturing techniques or transient magnetic fields generated on or off chip.
Ruili Zhang +2 more
openaire +1 more source