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2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005
Prior to our recent publication (J. Akerman et al, IEEE Trans. Dev. Mat. Rel. 4, p.428-435, 2004), little data on magnetoresistive random access memory (MRAM) reliability were available in the literature. In this paper, we present additional reliability data taken in full 4 Mb MRAM arrays, significantly extending the scope of our original study.
J. Akerman +10 more
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Prior to our recent publication (J. Akerman et al, IEEE Trans. Dev. Mat. Rel. 4, p.428-435, 2004), little data on magnetoresistive random access memory (MRAM) reliability were available in the literature. In this paper, we present additional reliability data taken in full 4 Mb MRAM arrays, significantly extending the scope of our original study.
J. Akerman +10 more
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2021 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2021
Yaoru Hou +7 more
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Yaoru Hou +7 more
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Fundamentals of MRAM Technology
Journal of Superconductivity, 2002Developments in portable communication and computing systems are creating a growing demand for nonvolatile random access memory that is dense and fast. None of the existing solid-state memories can provide all the needed attributes in a single memory solution. Therefore, to achieve the required multiple functionality requirements, a number of different
J. M. Slaughter +7 more
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Electrical Modeling of STT-MRAM Defects
2018 IEEE International Test Conference (ITC), 2018Spin-transfer-torque magnetic RAM (STT-MRAM) is one of the most promising emerging memory technologies. As various manufacturing vendors make significant efforts to push it to the market, appropriate STT-MRAM testing is of great importance. In this paper, we demonstrate that conventional STT-MRAM defect modeling, which is based on linear resistors, is ...
Siddharth Rao +2 more
exaly +2 more sources
Status and prospect for MRAM technology
2010 IEEE Hot Chips 22 Symposium (HCS), 2010This article consists of a collection of slides from the author's conference presentation on the Everspin family of MRAM technology. Some of the specific topics discussed include: the current status of MRAM products; key MRAM features; current MRAM product operations; recent advancements in MRAM technology, and targeted markets.
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2001
Abstract : Two important goals of Magnetoresistive Random Access Memory (MRAM) development are to improve MRAM manufacturability and to extend MRAM density to 100 nm dimensions. One potential barrier to MRAM manufacturability is associated with the method of write selection in which two orthogonal currents in coincidence must write data, whereas each ...
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Abstract : Two important goals of Magnetoresistive Random Access Memory (MRAM) development are to improve MRAM manufacturability and to extend MRAM density to 100 nm dimensions. One potential barrier to MRAM manufacturability is associated with the method of write selection in which two orthogonal currents in coincidence must write data, whereas each ...
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ROCKY: A Robust Hybrid On-Chip Memory Kit for the Processors With STT-MRAM Cache Technology
IEEE Transactions on Computers, 2021Amir Mahdi Hosseini Monazzah +1 more
exaly
Design of an Area and Energy-Efficient Last-Level Cache Memory Using STT-MRAM
Journal of Magnetism and Magnetic Materials, 2021Pankaj Kumar Pal +2 more
exaly
Progress and outlook for STT-MRAM
2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 2011Yiming Huai +5 more
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