Results 181 to 190 of about 5,091 (240)
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R-MRAM: A ROM-Embedded STT MRAM Cache
IEEE Electron Device Letters, 2013We present a new spin-transfer torque magnetic random access memory (STT MRAM) bit-cell that is embedded with read-only memory (ROM) functionality. The proposed ROM-embedded STT MRAM (R-MRAM) bit-cells include one extra bit-line. ROM data is stored by selectively connecting the magnetic tunnel junction (MTJ) to one of the two bit-lines.
Xuanyao Fong, Dongsoo Lee
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ACM Journal on Emerging Technologies in Computing Systems, 2016
In this work, we have studied two novel techniques to enhance the performance of existing geometry-based magnetoresistive RAM physically unclonable function (MRAM PUF). Geometry-based MRAM PUFs rely only on geometric variations in MRAM cells that generate preferred ground state in cells and form the basis of digital signature generation.
Jayita Das, Kevin Scott, Sanjukta Bhanja
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In this work, we have studied two novel techniques to enhance the performance of existing geometry-based magnetoresistive RAM physically unclonable function (MRAM PUF). Geometry-based MRAM PUFs rely only on geometric variations in MRAM cells that generate preferred ground state in cells and form the basis of digital signature generation.
Jayita Das, Kevin Scott, Sanjukta Bhanja
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IEEE Transactions on Circuits and Systems II: Express Briefs, 2021
This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance.
Taehui Na +2 more
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This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance.
Taehui Na +2 more
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2014 International Test Conference, 2014
Magnetic Random Access Memory (MRAM) is a new technology which offers a viable alternative to other forms of nonvolatile memory, such as flash, where read access time, writing speed, and cell endurance is at a premium. Difficulties in scaling DRAM below the 32nm node may make MRAM a suitable candidate for DRAM replacement.
Raphael Robertazzi +2 more
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Magnetic Random Access Memory (MRAM) is a new technology which offers a viable alternative to other forms of nonvolatile memory, such as flash, where read access time, writing speed, and cell endurance is at a premium. Difficulties in scaling DRAM below the 32nm node may make MRAM a suitable candidate for DRAM replacement.
Raphael Robertazzi +2 more
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Design considerations for MRAM
IBM Journal of Research and Development, 2006MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations.
Thomas M. Maffitt +8 more
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Records of the IEEE International Workshop on Memory Technology, Design and Testing, 2002
Memories using any type of on-chip magnetic memory elements (often known as MRAM) sometimes suffer from unstable magnetic domains within the memory bits. These states may occur because of improper bit manufacturing techniques or transient magnetic fields generated on or off chip.
Ruili Zhang +2 more
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Memories using any type of on-chip magnetic memory elements (often known as MRAM) sometimes suffer from unstable magnetic domains within the memory bits. These states may occur because of improper bit manufacturing techniques or transient magnetic fields generated on or off chip.
Ruili Zhang +2 more
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Probabilistically Programmed STT-MRAM
IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2012Novel memory programming methods and corresponding memory structures are presented in this paper. Unlike conventional memory programming, this programming technique does not require deterministic switching of memory elements. This technique explicitly exploits the probabilistic switching characteristics of memory elements such as spin-transfer torque ...
Wenqing Wu +4 more
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2015 25th International Conference on Field Programmable Logic and Applications (FPL), 2015
In this paper, we describe the use of magnetic RAM (MRAM) in coarse-grained reconfigurable arrays (CGRAs) as a configuration cache to allow for bulk low-energy storage and rapid device reconfiguration. If an energy-saving configuration update for an application is needed, a new configuration can be quickly swapped into compute blocks and interconnect ...
Xiaobin Liu +3 more
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In this paper, we describe the use of magnetic RAM (MRAM) in coarse-grained reconfigurable arrays (CGRAs) as a configuration cache to allow for bulk low-energy storage and rapid device reconfiguration. If an energy-saving configuration update for an application is needed, a new configuration can be quickly swapped into compute blocks and interconnect ...
Xiaobin Liu +3 more
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MRAM Coming to Consumer Products
IEEE Consumer Electronics Magazine, 2021It is argued that emerging memory technologies such as magnetic random access memory (MRAM), RRAM, and phase change memory (such as Intel's Optane) will displace conventional memories for consumer as well as data center applications. Using these nonvolatile memory technologies in consumer devices will enable longer battery life and more capability for ...
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Design of nonvolatile MRAM bitcell
2017 7th International Symposium on Embedded Computing and System Design (ISED), 2017Although Moore's law has been the most pursued principle since ever; it has become troublesome to apply that on the traditional MOS structures in today's scenario. Striking increment in the subthreshold leakage current, and various other disadvantages like gate-dielectric leakage gate-induced drain leakage (GIDL) are the major factors which limit the ...
Nikita Gupta +3 more
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