Results 191 to 200 of about 5,091 (240)
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2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005
Prior to our recent publication (J. Akerman et al, IEEE Trans. Dev. Mat. Rel. 4, p.428-435, 2004), little data on magnetoresistive random access memory (MRAM) reliability were available in the literature. In this paper, we present additional reliability data taken in full 4 Mb MRAM arrays, significantly extending the scope of our original study.
J. Akerman +10 more
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Prior to our recent publication (J. Akerman et al, IEEE Trans. Dev. Mat. Rel. 4, p.428-435, 2004), little data on magnetoresistive random access memory (MRAM) reliability were available in the literature. In this paper, we present additional reliability data taken in full 4 Mb MRAM arrays, significantly extending the scope of our original study.
J. Akerman +10 more
openaire +1 more source
2021 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2021
Yaoru Hou +7 more
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Yaoru Hou +7 more
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Fundamentals of MRAM Technology
Journal of Superconductivity, 2002Developments in portable communication and computing systems are creating a growing demand for nonvolatile random access memory that is dense and fast. None of the existing solid-state memories can provide all the needed attributes in a single memory solution. Therefore, to achieve the required multiple functionality requirements, a number of different
J. M. Slaughter +7 more
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Status and prospect for MRAM technology
2010 IEEE Hot Chips 22 Symposium (HCS), 2010This article consists of a collection of slides from the author's conference presentation on the Everspin family of MRAM technology. Some of the specific topics discussed include: the current status of MRAM products; key MRAM features; current MRAM product operations; recent advancements in MRAM technology, and targeted markets.
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Design of an area and energy-efficient last-level cache memory using STT-MRAM
Journal of Magnetism and Magnetic Materials, 2021Pankaj Kumar Pal +2 more
exaly
2001
Abstract : Two important goals of Magnetoresistive Random Access Memory (MRAM) development are to improve MRAM manufacturability and to extend MRAM density to 100 nm dimensions. One potential barrier to MRAM manufacturability is associated with the method of write selection in which two orthogonal currents in coincidence must write data, whereas each ...
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Abstract : Two important goals of Magnetoresistive Random Access Memory (MRAM) development are to improve MRAM manufacturability and to extend MRAM density to 100 nm dimensions. One potential barrier to MRAM manufacturability is associated with the method of write selection in which two orthogonal currents in coincidence must write data, whereas each ...
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A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices
Micromachines, 2023Siegfried Selberherr +2 more
exaly
Fast cacheline-based data replacement for hybrid DRAM and STT-MRAM main memory
IEICE Electronics Express, 2020Chen Lan
exaly
Finite Element Approach for the Simulation of Modern MRAM Devices
Micromachines, 2023Siegfried Selberherr +2 more
exaly