Results 191 to 200 of about 4,026 (228)

MRAM Coming to Consumer Products

IEEE Consumer Electronics Magazine, 2021
It is argued that emerging memory technologies such as magnetic random access memory (MRAM), RRAM, and phase change memory (such as Intel's Optane) will displace conventional memories for consumer as well as data center applications. Using these nonvolatile memory technologies in consumer devices will enable longer battery life and more capability for ...
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Adaptive MRAM-based CGRAs

2015 25th International Conference on Field Programmable Logic and Applications (FPL), 2015
In this paper, we describe the use of magnetic RAM (MRAM) in coarse-grained reconfigurable arrays (CGRAs) as a configuration cache to allow for bulk low-energy storage and rapid device reconfiguration. If an energy-saving configuration update for an application is needed, a new configuration can be quickly swapped into compute blocks and interconnect ...
Xiaobin Liu, Tedy Thomas, Alan Boguslawski, Russell Tessier   +3 more
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Design of nonvolatile MRAM bitcell

2017 7th International Symposium on Embedded Computing and System Design (ISED), 2017
Although Moore's law has been the most pursued principle since ever; it has become troublesome to apply that on the traditional MOS structures in today's scenario. Striking increment in the subthreshold leakage current, and various other disadvantages like gate-dielectric leakage gate-induced drain leakage (GIDL) are the major factors which limit the ...
Nikita Gupta, Pragati Thakur, Shashank Kumar Dubey, Aminul Islam 0002   +3 more
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Thermally assisted MRAM

Journal of Physics: Condensed Matter, 2007
A thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing; the memory device comprising a tunnel barrier 14 sandwiched between a ferromagnetic sense layer 16 and a ferromagnetic storage layer 12. An antiferromagnetic pinning layer 30 is disposed adjacent to the ferromagnetic storage layer 12.
I L Prejbeanu, M Kerekes, R C Sousa, H Sibuet, O Redon, B Dieny, J P Nozières   +6 more
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Reliability of 4MBIT MRAM

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005
Prior to our recent publication (J. Akerman et al, IEEE Trans. Dev. Mat. Rel. 4, p.428-435, 2004), little data on magnetoresistive random access memory (MRAM) reliability were available in the literature. In this paper, we present additional reliability data taken in full 4 Mb MRAM arrays, significantly extending the scope of our original study.
J. Akerman, P. Brown, D. Gajewski, M. Griswold, J. Janesky, M. Martin, H. Mekonnen, J.J. Nahas, S. Pietambaram, J.M. Slaughter, S. Tehrani   +10 more
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Radiation effects on MRAM

2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007
We report on SEL and TID tests of a magnetoresistive random access memory (MRAM). Single event latch-up was observed with a static configuration. Insitu irradiations were used to characterize the response of the total accumulated dose failures.
D. N. Nguyen, F. Irom
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Fundamentals of MRAM Technology

Journal of Superconductivity, 2002
Developments in portable communication and computing systems are creating a growing demand for nonvolatile random access memory that is dense and fast. None of the existing solid-state memories can provide all the needed attributes in a single memory solution. Therefore, to achieve the required multiple functionality requirements, a number of different
J. M. Slaughter, R. W. Dave, M. DeHerrera, M. Durlam, B. N. Engel, J. Janesky, N. D. Rizzo, S. Tehrani   +7 more
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A 90nm 12ns 32Mb 2T1MTJ MRAM

2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2009
Since MRAM cells have unlimited write endurance, they can be used as substitutes for DRAMs or SRAMs. MRAMs in electronic appliances enhance their convenience and energy efficiency because data in MRAMs are nonvolatile and retained even in the power-off state. Therefore, 2 to 16Mb standalone MRAMs have been developed [1–4].
Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Shinsaku Saito, Yuichi Ito, Sadahiko Miura, Yuko Kato, Kaoru Mori, Yasuaki Ozaki, Yosuke Kobayashi, Norikazu Ohshima, Keizo Kinoshita, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata, Katsumi Suemitsu, Shunsuke Fukami, Hiromitsu Hada, Tadahiko Sugibayashi, Naoki Kasai   +19 more
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ST-MRAM fundamentals, challenges, and applications

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013
Magnetoresistive Random Access Memory (MRAM) technology emerged from research and development into volume production within the last decade in the form of Toggle MRAM. The latest Magnetic Tunnel Junction (MTJ) based memory technology, Spin-Torque MRAM, has reached the level of customer sampling, offering higher density and bandwidth.
Thomas W. Andre, Syed M. Alam, Dietmar Gogl, C. K. Subramanian, Hal Lin, W. Meadows, X. Zhang, Nicholas D. Rizzo, Jason Janesky, D. Houssameddine, Jon M. Slaughter   +10 more
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Scalability and logic functionalities of TA-MRAMs

2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS), 2013
This paper describes the working principle of thermally assisted MRAM extending the downsize scalability of MRAM and introducing new functionalities particularly useful for security applications. Ultimately, STT switching assisted by thermally induced anisotropy reorientation can be used in MTJ with perpendicular magnetic anisotropy to obtain ultimate ...
Ioan Lucian Prejbeanu, Ricardo C. Sousa, Bernard Dieny, Jean-Pierre Nozieres, S. Bandiera, Jérémy Alvarez-Herault, Q. Stainer, L. Lombard, Clarisse Ducruet, Y. Conraux, Ken Mackay   +10 more
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