Results 171 to 180 of about 5,091 (240)

Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling. [PDF]

Sci Rep
Jørstad NP, Pruckner B, Goes W, Selberherr S, Sverdlov V.   +4 more
europepmc   +1 more source

Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory. [PDF]

Sci Technol Adv Mater
Kumar D, Ishibashi M, Roy T, Tsujikawa M, Shirai M, Mizukami S.   +5 more
europepmc   +1 more source

Temperature Gradients as a Data Storage Principle. [PDF]

Entropy (Basel)
Schoenmaker J, Martins PG, Teixeira JC.
europepmc   +1 more source

High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric Hf_0.5Zr_0.5O₂ capacitors. [PDF]

Microsyst Nanoeng
Paasio E, Thomann S, Anu A, Li X, Ranta R, Srivari P, Muhammad S, Mazumder S, Mariam J, Padovani A, Amrouch H, Thareja G, Majumdar S.   +12 more
europepmc   +1 more source

Large unidirectional spin Hall magnetoresistance in FeNi/Pt/Bi₂Se₃ trilayers by Pt interfacial engineering. [PDF]

Nat Commun
Zhang Q, Tao K, Jia C, Xu G, Chai G, Zuo Y, Cui B, Yang D, Xue D, Xi L.   +9 more
europepmc   +1 more source

<i>Mycoplasma genitalium</i> molecular typing in men with non-gonococcal urethritis discriminates between phylogenetic clusters based on sexual preference and antibiotic resistance. [PDF]

J Med Microbiol
Adriaens N, Bouwman FM, Bruisten SM, Vergunst CE, van Dam AP, Doelman TA, Westerhuis BM.   +6 more
europepmc   +1 more source

Enhanced Field-Like Torque Generated from the Anisotropic Spin-Split Effect in Triple-Domain RuO₂ for Energy-Efficient Spin-Orbit Torque Magnetic Random-Access Memory. [PDF]

Adv Sci (Weinh)
Nguyen TVA, Naganuma H, Vu TNH, DuttaGupta S, Saito Y, Vu D, Endo Y, Ikeda S, Endoh T.   +8 more
europepmc   +1 more source

DSH-MRAM: Differential Spin Hall MRAM for On-Chip Memories [PDF]

IEEE Electron Device Letters, 2013
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and energy-efficient write operation.
Sri Harsha Choday, Yusung Kim
exaly   +3 more sources

Some of the next articles are maybe not open access.

Related searches:

Recent Progresses in STT-MRAM and SOT-MRAM for Next Generation MRAM

2020 IEEE Symposium on VLSI Technology, 2020
In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies.
Tetsuo Endoh, Hiroaki Honjo, Koichi Nishioka, Shoji Ikeda   +3 more
openaire   +1 more source