Artificial Neural Network Assisted Error Correction for MLC NAND Flash Memory [PDF]
Micromachines, 2021 The multilevel per cell technology and continued scaling down process technology significantly improves the storage density of NAND flash memory but also brings about a challenge in that data reliability degrades due to the serious noise.
Ruiquan He +3 more
doaj +2 more sources
Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory [PDF]
Micromachines, 2021 In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better ...
Woo-Jin Jung, Jun-Young Park
doaj +2 more sources
Channel Modeling and Quantization Design for 3D NAND Flash Memory [PDF]
Entropy, 2023 As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers.
Cheng Wang +5 more
doaj +2 more sources
Architecture and Process Integration Overview of 3D NAND Flash Technologies
Applied Sciences (Switzerland), 2021 In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties.
Geun Ho Lee, Sungmin Hwang, Junsu Yu
exaly +3 more sources
Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]
Scientific ReportsThis study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
doaj +2 more sources
3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage [PDF]
Nanomaterials, 2022 As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Xinyue Yu +6 more
doaj +2 more sources
An SVM-Based NAND Flash Endurance Prediction Method [PDF]
Micromachines, 2021 NAND flash memory is widely used in communications, commercial servers, and cloud storage devices with a series of advantages such as high density, low cost, high speed, anti-magnetic, and anti-vibration.
Haichun Zhang +5 more
doaj +2 more sources
Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories [PDF]
Micromachines, 2021 Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen +6 more
doaj +2 more sources
Concealable physical unclonable functions using vertical NAND flash memory [PDF]
Nature CommunicationsPhysical Unclonable Functions (PUFs) can address the demand for enhanced hardware security. Vertical NAND (V-NAND) flash memory is the most commercialized non-volatile memory.
Sung-Ho Park +5 more
doaj +2 more sources
Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash [PDF]
Micromachines, 2023 The bit density is generally increased by stacking more layers in 3D NAND Flash. Gate-induced drain leakage (GIDL) erase is a critical enabler in the future development of 3D NAND Flash.
Tao Yang +4 more
doaj +2 more sources