Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability [PDF]
MicromachinesThree-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost.
Xuesong Zheng +6 more
doaj +2 more sources
Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
Computers, 2017 We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Alessandro Sottocornola Spinelli +2 more
exaly +3 more sources
Neuromorphic Computing Using NAND Flash Memory Architecture With Pulse Width Modulation Scheme [PDF]
Frontiers in Neuroscience, 2020 A novel operation scheme is proposed for high-density and highly robust neuromorphic computing based on NAND flash memory architecture. Analog input is represented with time-encoded input pulse by pulse width modulation (PWM) circuit, and 4-bit synaptic ...
Sung-Tae Lee, Jong-Ho Lee
doaj +2 more sources
Bilayer LDPC Codes Combined with Perturbed Decoding for MLC NAND Flash Memory [PDF]
EntropyThis paper presents a coding scheme based on bilayer low-density parity-check (LDPC) codes for multi-level cell (MLC) NAND flash memory. The main feature of the proposed scheme is that it exploits the asymmetric properties of an MLC flash channel and ...
Lingjun Kong +3 more
doaj +2 more sources
Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices [PDF]
Sensors, 2020 NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits
Seung-Ho Lim, Ki-Woong Park
doaj +2 more sources
Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems [PDF]
Sensors, 2014 While the NAND flash memory is widely used as the storage medium in modern sensor systems, the aggressive shrinking of process geometry and an increase in the number of bits stored in each memory cell will inevitably degrade the reliability of NAND flash
Min Huang, Zhaoqing Liu, Liyan Qiao
doaj +2 more sources
Random Telegraph Noise in 3D NAND Flash Memories. [PDF]
Micromachines (Basel), 2021 In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport.
Spinelli AS +3 more
europepmc +5 more sources
Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping
Memories - Materials, Devices, Circuits and Systems, 2023 The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper.
Deepika Gupta +3 more
doaj +1 more source
Advanced Intelligent Systems, 2023 Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho +8 more
doaj +1 more source
IEEE Access, 2021 This paper focuses on the NAND flash memory as a data storage medium in the Internet of things data acquisition system, which plays an important role from beginning to end.
Zhuo Hou +3 more
doaj +1 more source