Results 51 to 60 of about 16,097 (194)

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages

Micromachines, 2022
Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some potential challenges should be investigated.
Dongwoo Lee, Changhwan Shin
doaj   +1 more source

On Benchmarking Embedded Linux Flash File Systems

, 2012
Due to its attractive characteristics in terms of performance, weight and power consumption, NAND flash memory became the main non volatile memory (NVM) in embedded systems.
Boukhobza, Jalil, Olivier, Pierre, Senn, Eric   +2 more
core   +2 more sources

Energy-Efficient Streaming Using Non-volatile Memory [PDF]

, 2008
The disk and the DRAM in a typical mobile system consume a significant fraction (up to 30%) of the total system energy. To save on storage energy, the DRAM should be small and the disk should be spun down for long periods of time.
Dijk, Hylke W. van, Hartel, Pieter H., Khatib, Mohammed G.   +2 more
core   +2 more sources

Dissolution Study of Biodegradable Magnesium Silicide Thin Films for Transient Electronic Applications

Advanced Science, EarlyView.
Magnesium silicide (Mg2Si) is introduced as a narrow‐bandgap, biodegradable semiconductor for transient electronics. RF‐sputtered and annealed Mg2Si thin films show high intrinsic electrical conductivity and low thermal conductivity. The polycrystalline material undergoes hydrolysis in aquatic and composting environments with minimal cytotoxicity ...
Ji‐Woo Gu, Jun‐Seok Shim, Minjung Chae, Yoonseong Jung, Su‐Min Kim, Young‐In Ryu, Jae‐Hwan Lee, Sung‐Woo Kim, Kyung‐Sub Kim, Tae‐Woo Lee, Edyta Wyszkowska, Jungho Shin, Hyejin Jang, Ju‐Young Kim, Myoung‐Ryul Ok, Jong‐hyoung Kim, Jae‐Young Bae, Seung‐Kyun Kang   +17 more
wiley   +1 more source

Firmware uploading station for the use in mass production of variable-frequency drives [PDF]

, 2013
Työssä tutustutaan Flash-muistiteknologiaan ja suunnitellaan asema, joka lataa ohjelmiston taajuusmuuttajan Flash-muistiin. Flash-muistien käsittely rajataan kahteen yleisimpään tyyppiin: NAND- ja NOR-muisteihin.
Ainola, Eppu
core  

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures

Advanced Electronic Materials, EarlyView.
Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan, Hari Jayasankar, Salma Soliman, Priyankka Ravikumar, Lance Fernandes, Chinsung Park, Amrit Garlapati, Chengyang Zhang, Sanghyun Kang, Shimeng Yu, Suman Datta, Asif Khan, Mengkun Tian, Zheng Wang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Luca Larcher, Gaurav Thareja, Andrea Padovani   +21 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source