Results 61 to 70 of about 16,097 (194)
Advanced Intelligent Systems, EarlyView.This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze +8 more
wiley +1 more source
Investigation of Retention Noise for 3-D TLC NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2019 In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated.
Kunliang Wang +3 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was ...
Dan Wu +4 more
doaj +1 more source
Advanced Intelligent Systems, EarlyView.A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo +4 more
wiley +1 more source
Advanced Intelligent Systems, EarlyView.Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang +4 more
wiley +1 more source
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Advanced Intelligent Systems, EarlyView.Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source
3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio
AIP Advances, 2022 As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann ...
Xinyue Yu +7 more
doaj +1 more source
Advanced Intelligent Systems, EarlyView.A fully integrated analog processing‐in‐memory system is demonstrated, combining charge‐trap flash synapse arrays with a successive integration‐and‐rescaling neuron circuit. The architecture performs bit‐sliced analog accumulation with high linearity and low power, achieving efficient and scalable analog in‐memory computing and bridging device‐level ...
Sojoong Kim +4 more
wiley +1 more source
Carbon Energy, EarlyView.Keggin‐type Al‐POM‐coated silica achieves selective surface oxidation of amorphous carbon through electrostatic attraction and proton‐coupled oxidation, tailoring interfacial properties for lithium‐ion batteries and semiconductor processes. ABSTRACT Amorphous carbon is widely used in energy storage and semiconductor technologies, where surface ...
Ganggyu Lee +13 more
wiley +1 more source
Media Storage Technology Usb Flash Drive [PDF]
, 2003 USB Flash Drive is a type of NAND-type flash memory combined with a 1.1 or USB 2.0 andused as data storage devices smaller and lighter. Because of the sophistication that has madeUSB Flash Drive becoming increasingly popular as an alternative replacement
Irawati, D. R. (Diyah)
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