Results 161 to 170 of about 10,782 (198)

Integration Technology of 30nm Generation Multi-Level NAND Flash for 64Gb NAND Flash Memory

2007 IEEE Symposium on VLSI Technology, 2007
Multi-level NAND flash memories with a 38 nm design rule have been successfully developed for the first time. A breakthrough patterning technology of Self Aligned Double Patterning (SADP) together with ArF lithography is applied to three critical lithographic steps.
Donghwa Kwak, Jaekwan Park, Keonsoo Kim, Yongsik Yim, Soojin Ahn, Yoonmoon Park, Jinho Kim, Woncheol Jeong, Jooyoung Kim, Mincheol Park, Byungkwan Yoo, Sangbin Song, Hyunsuk Kim, Jaehwang Sim, Sunghyun Kwon, Byungjoon Hwang, Hyung-kyu Park, Sunghoon Kim, Yunkyoung Lee, Hwagyung Shin, Namsoo Yim, Kwangseok Lee, Minjung Kim, Youngho Lee, Jangho Park, Sangyong Park, Jaesuk Jung, Kinam Kim   +27 more
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Scaling challenges of NAND flash memory and hybrid memory system with storage class memory & NAND flash memory

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013
This paper summarizes the scaling challenges of the conventional 2D floating-gate cell NAND flash memories [1, 2]. The scaling trends and limits of the bulk and SOI NAND flash memories are investigated in terms of short channel effects and channel boosting leakage from 20nm to below 10nm generation using 3D-device simulation.
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Reliability of 3D NAND Flash Memories

2016
In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical ...
GROSSI, Alessandro, ZAMBELLI, Cristian, OLIVO, Piero   +2 more
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FTL algorithms for NAND-type flash memories

Design Automation for Embedded Systems, 2011
Flash memory is being rapidly deployed as data storage for embedded devices such as PDAs, MP3 players, mobile phones and digital cameras due to its low electronic power, non-volatile storage, high performance, physical stability and portability. The most prominent characteristic of flash memory is that prewritten data can only be dynamically updated ...
Se Jin Kwon, Arun Ranjitkar, Young-Bae Ko, Tae-Sun Chung   +3 more
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Terminated Staircase Codes for NAND Flash Memories

IEEE Transactions on Communications, 2018
In this paper, we propose novel terminated staircase codes for NAND flash memories. Specifically, we design a rate 0.89 staircase code whose component code is a Bose–Chaudhuri–Hocquenghem (BCH) code, for flash memories with page size of 16K bytes. Different from most conventional unterminated staircase codes, we propose a novel coding structure by ...
Min Qiu, Lei Yang, Yixuan Xie, Jinhong Yuan   +3 more
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3D VG-Type NAND Flash Memories

2016
The common feature among the different 3D NAND solutions is constituted by very deep vertical (z direction) etching steps that define the Flash cells geometries simultaneously. Transistor geometries are formed by the deep trench through a multiple polysilicon/oxide stack.
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Intrinsic fluctuations in Vertical NAND flash memories

2012 Symposium on VLSI Technology (VLSIT), 2012
Vertical NAND (VNAND) technology relies on polysilicon for channel material. Two intrinsic variation sources of the cell threshold voltage induced by polysilicon traps have been identified and simulated: Random Trap Fluctuation (RTF) and Random Telegraph Noise (RTN).
Etienne Nowak, Jae-Ho Kim, HyeYoung Kwon, Young-Gu Kim, Jae Sung Sim, Seung-Hyun Lim, Dae Sin Kim, Keun-Ho Lee, Young-Kwan Park, Jeong-Hyuk Choi, Chilhee Chung   +10 more
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Reliability of NAND Flash Memories

2010
The continuous demand for NAND flash memories with higher performance and storage capabilities pushes the manufactures towards the limits of present technologies and to explore new solutions, both from the physical and the architectural point of view. The memory reliability represents one of the major antagonist towards this un-stoppable technological ...
ZAMBELLI, Cristian, CHIMENTON, Andrea, OLIVO, Piero   +2 more
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Empirical evaluation of NAND flash memory performance

ACM SIGOPS Operating Systems Review, 2010
Reports of NAND ash device testing in the literature have for the most part been limited to examination of circuit-level parameters on raw ash chips or prototypes, and system-level parameters on entire storage subsystems. However, there has been little examination of system-level parameters of raw devices, such as mean latency and endurance values.
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Efficient Wear Leveling in NAND Flash Memory

2012
In the recent years, flash storage devices such as solid-state drives (SSDs) and flash cards have become a popular choice for the replacement of hard disk drives, especially in the applications of mobile computing devices and consumer electronics. However, the physical constraints of flash memory pose a lifetime limitation on these storage devices. New
Yuan-Hao Chang, Li-Pin Chang
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