Results 21 to 30 of about 204 (157)

Data-Driven Modeling of Low Frequency Noise Using Capture-Emission Energy Maps

Applied Sciences, 2020
A new approach for modeling low frequency noise is presented to enable the predictions of noise behavior from negative bias temperature instability (NBTI). The noise model is based on a capture-emission energy (CEE) map describing the probability density
Jonghwan Lee
doaj   +1 more source

NBTI and Power Reduction Using an Input Vector Control and Supply Voltage Assignment Method

Algorithms, 2017
As technology scales, negative bias temperature instability (NBTI) becomes one of the primary failure mechanisms for Very Large Scale Integration (VLSI) circuits.
Peng Sun, Zhiming Yang, Yang Yu, Junbao Li, Xiyuan Peng   +4 more
doaj   +1 more source

Similarities Between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in Mosfet Devices [PDF]

ECS Meeting Abstracts, 2013
Abstract not Available.
Harold P. Hjalmarson, Duc Nguyen, Kenneth Kambour, Camron Kouhestani, Roderick A.B. Devine   +4 more
openaire   +2 more sources

Anti-Interference Low-Power Double-Edge Triggered Flip-Flop Based on C-Elements

Tsinghua Science and Technology, 2022
When the input signal has been interfered and glitches occur, the power consumption of Double-Edge Triggered Flip-Flops (DETFFs) will significantly increase.
Zhengfeng Huang, Xiao Yang, Tai Song, Haochen Qi, Yiming Ouyang, Tianming Ni, Qi Xu   +6 more
doaj   +1 more source

Ingress of Threshold Voltage-Triggered Hardware Trojan in the Modern FPGA Fabric–Detection Methodology and Mitigation

IEEE Access, 2020
The ageing phenomenon of negative bias temperature instability (NBTI) continues to challenge the dynamic thermal management of modern FPGAs. Increased transistor density leads to thermal accumulation and propagates higher and non-uniform temperature ...
Sohaib Aslam, Ian K. Jennions, Mohammad Samie, Suresh Perinpanayagam, Yisen Fang   +4 more
doaj   +1 more source

An Ageing-Aware and Temperature Mapping Algorithm for Multilevel Cache Nodes

IEEE Access, 2023
Increase in chip inactivity in the future threatens the performance of many-core systems and therefore, efficient techniques are required for continuous scaling of transistors.
Emmanuel Ofori-Attah, Michael Opoku Agyeman   +1 more
doaj   +1 more source

Impact of negative and positive bias temperature stress on 6T-SRAM cells [PDF]

Advances in Radio Science, 2009
With introduction of high-k gate oxide materials, the degradation effect <i>Positive Bias Temperature Instability</i> (PBTI) is starting to play an important role.
S. Drapatz, G. Georgakos, D. Schmitt-Landsiedel   +2 more
doaj  

High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices

ECS Transactions, 2013
We have performed negative bias instability (NBTI) measurements on 130 nm channel length Si MOSFETs with SiON gate dielectrics at different temperatures up to 220 °C. Using a pulsed stressiing and pseudo-DC measurements we have focused on the charging and annealing kinetics of only the interface state related component. At temperatures > 180 °C we
Duc Nguyen, Kenneth Kambour, Camron Kouhestani, Harold P. Hjalmarson, Roderick A.B. Devine   +4 more
openaire   +2 more sources

Enhancement-mode tri-gate GaN MIS-HEMTs with PEALD-AlN/HfO2 dual-gate dielectric [PDF]

APL Electronic Devices
In this study, we demonstrate a PEALD-AlN/HfO2 dual-gate dielectric normally-off GaN high-electron-mobility transistor (HEMT) with a recess-tri-gate architecture.
Rahul Rai, Viet Quoc Ho, Khanh Quoc Nguyen, Hao Chung Kuo, Edward Yi Chang   +4 more
doaj   +1 more source

Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

Advances in Condensed Matter Physics, Volume 2015, Issue 1, 2015., 2015
We examine the impact of negative bias temperature (NBT) stress on the fluctuations in ID and IG for deeply scaled pMOSFETs and find that the relative high NBT stress triggers IG‐RTN and ID‐step. Through the analysis of the field dependence of emission constant and the carrier separation measurement, it is found that under the relative high NBT stress ...
Yiming Liao, Xiaoli Ji, Qiang Guo, Feng Yan, Jiwu Lu   +4 more
wiley   +1 more source