Results 1 to 10 of about 46,733 (275)
Twisted atomic magnetic tunnel junctions with multiple nonvolatile states [PDF]
Nature CommunicationsMagnetic tunnel junctions (MTJs), a key spintronic device, have shown rapid development recently using two-dimensional (2D) magnets. In particular, MTJs formed from twisted 2D antiferromagnets (AFMs) push nonvolatile magnetic information storage to the ...
Yuliang Chen +9 more
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Nonvolatile storage in photorefractive crystals [PDF]
Optics Letters, 1994 We propose and demonstrate a nonvolatile holographic recording system for storing two-dimensional images. The readout light in this system is not absorbed by the holographic medium, and the data are preformatted or postformatted so that lines from ...
Li, Hsin-Yu Sidney +2 more
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On-chip graphene photodetectors with a nonvolatile p–i–n homojunction [PDF]
Light: Science & ApplicationsGraphene’s unique photothermoelectric (PTE) effect, combined with its compatibility for on-chip fabrication, promises its development in chip-integrated photodetectors with ultralow dark-current and ultrafast speed.
Ruijuan Tian +17 more
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Magneto-thermal switching using superconducting metals and alloys [PDF]
Science and Technology of Advanced MaterialsSuperconductors exhibit low thermal conductivity (κ) due to the suppression of electronic thermal conduction in the superconducting states with Cooper pairs. This change in κ enables superconductors to function as magneto-thermal switches (MTS).
Hiroto Arima +3 more
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An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time
Applied Sciences, 2022 Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin +4 more
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Spin and charge drift-diffusion in ultra-scaled MRAM cells
Scientific Reports, 2022 Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers.
Simone Fiorentini +6 more
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Emerging CMOS Compatible Magnetic Memories and Logic
IEEE Journal of the Electron Devices Society, 2021 As scaling of the feature size - the main driving force behind an outstanding increase of the performance of modern electronic circuits - displays signs of saturation, the main focus of engineering research in microelectronics shifts towards finding new ...
Johannes Ender +5 more
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IEEE Journal of the Electron Devices Society, 2021 We propose a magnetic field-free spin-orbit torque switching scheme based on two orthogonal current pulses, for which deterministic switching is demonstrated via numerical simulations.
R. L. de Orio +5 more
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Finite Element Approach for the Simulation of Modern MRAM Devices
Micromachines, 2023 Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help in ...
Simone Fiorentini +7 more
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A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices
Micromachines, 2023 We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM).
Tomáš Hadámek +5 more
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