Results 11 to 20 of about 46,832 (274)

A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts

IEEE Access, 2023
In this work, a high-performance nanoscale complementary low Schottky barrier (CLSB) nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on dual metal silicide source/drain (S/D) contacts (CLSB-NBRFET) is proposed.
Liu Xi, Ya Wang, Meile Wu, Lin Qi, Mengmeng Li, Shouqiang Zhang, Xiaoshi Jin   +6 more
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A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe₂O₃ Nanowire Arrays

Molecules, 2023
A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction.
Zhiqiang Yu, Jiamin Xu, Baosheng Liu, Zijun Sun, Qingnan Huang, Meilian Ou, Qingcheng Wang, Jinhao Jia, Wenbo Kang, Qingquan Xiao, Tinghong Gao, Quan Xie   +11 more
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Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM

IEEE Journal of the Electron Devices Society, 2020
In spin-transfer torque magnetoresistive random access memory, the magnetization dynamics of a free layer is usually assumed to be determined by the torque created via a position-independent current density.
S. Fiorentini, R. L. de Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov   +5 more
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Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

Molecules, 2023
A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching ...
Zhiqiang Yu, Jinhao Jia, Xinru Qu, Qingcheng Wang, Wenbo Kang, Baosheng Liu, Qingquan Xiao, Tinghong Gao, Quan Xie   +8 more
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Different Withering Times Affect Sensory Qualities, Chemical Components, and Nutritional Characteristics of Black Tea

Foods, 2021
The present study emphasizes the effect of withering time set at 4 ± 0.5 h (WT4), 6 ± 0.5 h (WT6), 8 ± 0.5 h (WT8), 10 ± 0.5 h (WT10), and 12 ± 0.5 h (WT12) on the sensory qualities, chemical components, and nutritional characteristics of black tea.
Bernard Ntezimana, Yuchuan Li, Chang He, Xinlei Yu, Jingtao Zhou, Yuqiong Chen, Zhi Yu, Dejiang Ni   +7 more
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Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning

Micromachines, 2021
Spin-orbit torque memory is a suitable candidate for next generation nonvolatile magnetoresistive random access memory. It combines high-speed operation with excellent endurance, being particularly promising for application in caches. In this work, a two-
Roberto L. de Orio, Johannes Ender, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +5 more
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The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO₂/FTO Memory Device

Sensors, 2023
In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device is analyzed.
Zhiqiang Yu, Xu Han, Jiamin Xu, Cheng Chen, Xinru Qu, Baosheng Liu, Zijun Sun, Tangyou Sun   +7 more
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Electrical Re-Writable Non-Volatile Memory Device based on PEDOT:PSS Thin Film [PDF]

, 2020
open access articleIn this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells.
Pantelidis, Christos Christodoulos, Salaoru, Iulia   +1 more
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Area-Scalable 10⁹-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process

Nanomaterials, 2021
Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with channel lengths of 85 nm were fabricated by a replacement-gate process.
Mitsue Takahashi, Shigeki Sakai
doaj   +1 more source

Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories

Nanomaterials, 2023
In this study, the bipolar switching properties and electrical conduction behaviors of the ITO thin films RRAM devices were investigated. For the transparent RRAM devices structure, indium tin oxide thin films were deposited by using the RF magnetron ...
Kai-Huang Chen, Chien-Min Cheng, Mei-Li Chen, Yi-Yun Pan   +3 more
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