Charge Trap Memory Based on Few-Layered Black Phosphorus
, 2015 Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications in flexible ...
Feng, Qi +3 more
core +1 more source
A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET
IEEE Journal of the Electron Devices Society, 2020 This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations.
Wei-Xiang You, Pin Su, Chenming Hu
doaj +1 more source
Printed dose-recording tag based on organic complementary circuits and ferroelectric nonvolatile memories. [PDF]
, 2015 We have demonstrated a printed electronic tag that monitors time-integrated sensor signals and writes to nonvolatile memories for later readout. The tag is additively fabricated on flexible plastic foil and comprises a thermistor divider, complementary ...
Bröms, Per +10 more
core +2 more sources
Stress-Induced Leakage Current in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material [PDF]
, 1999 The gate bias polarity dependence of stress-induced leakage current (SILC) of PMOS capacitors with a p+ polycrystalline silicon (poly-Si) and polycrystalline Silicon-Germanium (poly-Si0.7 Ge0.3) gate on 5.6-nm thick gate oxides has been investigated.
Holleman, J. +5 more
core +3 more sources
Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling
Scientific ReportsA three-dimensional description of spin-dependent current transport across nonmagnetic/ferromagnetic interfaces with strong interfacial spin-orbit coupling is presented.
Nils Petter Jørstad +4 more
doaj +1 more source
Editorial for the Special Issue on Magnetic and Spin Devices
Micromachines, 2022 As scaling of semiconductor devices displays signs of saturation, the focus of research in microelectronics shifts towards finding new computing paradigms based on novel physical principles [...]
Viktor Sverdlov, Nuttachai Jutong
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Size and Location Control of Si Nanocrystals at Ion Beam Synthesis in Thin SiO2 Films
, 2002 Binary collision simulations of high-fluence 1 keV Si ion implantation into 8 nm thick SiO2 films on (001)Si were combined with kinetic Monte Carlo simulations of Si nanocrystal (NC) formation by phase separation during annealing.
Heinig, Karl-Heinz +2 more
core +1 more source
Solid solutions of rare earth cations in mesoporous anatase beads and their performances in dye-sensitized solar cells [PDF]
, 2015 Solid solutions of the rare earth (RE) cations Pr3+, Nd3+, Sm3+, Gd3+, Er3+ and Yb3+ in anatase TiO2 have been synthesized as mesoporous beads in the concentration range 0.1-0.3% of metal atoms.
Cavallo, Carmen +6 more
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Advanced Electronic MaterialsAnti‐ferroelectrics (AFEs) offer unique properties such as double hysteresis window, high endurance, and low latency, making them appealing for neuromorphic computing architectures.
Mohammad Khaleqi Qaleh Jooq +4 more
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Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion
Advanced Electronic Materials, 2022 2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide ...
Aishani Mazumder +8 more
doaj +1 more source