Results 51 to 60 of about 46,832 (274)

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Advanced Electronic Materials, 2022
2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide ...
Aishani Mazumder, Taimur Ahmed, Edwin Mayes, Sherif Abdulkader Tawfik, Salvy P. Russo, Mei Xian Low, Abhishek Ranjan, Sivacarendran Balendhran, Sumeet Walia   +8 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Electrostatically Controlled Magnetization Rotation in Ferromagnet-Topological Insulator Planar Structures

, 2012
An approach to the electrostatic control of $90^{\circ}$ magnetization rotation in the hybrid structures composed of topological insulators (TIs) and adjacent ferromagnetic insulators (FMI) is proposed and studied.
Duan, Xiaopeng, Kim, Ki Wook, Semenov, Yuriy G   +2 more
core   +1 more source

Skyrmion-mediated nonvolatile ternary memory

Scientific Reports
Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that voltage-controlled magnetic anisotropy (VCMA) based writing is highly energy-efficient compared to other writing ...
Md Mahadi Rajib, Namita Bindal, Ravish Kumar Raj, Brajesh Kumar Kaushik, Jayasimha Atulasimha   +4 more
openaire   +4 more sources

Widely Targeted Metabolomics Analysis Reveals the Differences of Nonvolatile Compounds in Oolong Tea in Different Production Areas

Foods, 2022
The flavor differences in Oolong tea from different producing areas are caused by its complex differential compounds. In this study, representative samples of Oolong tea from four countries were collected, and their differential nonvolatile compounds ...
Zhihui Wang, Shuang Gan, Weijiang Sun, Zhidan Chen   +3 more
doaj   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

On the implications of aerosol liquid water and phase separation for modeled organic aerosol mass [PDF]

, 2016
Water is an important component of PM2.5 Many traditional SOA species are highly soluble and thus can be considered extractable Water can influence the partitioning of compounds traditionally considered insoluble in models Organic aerosol takes up water ...
Appel, KW, Budisulistiorini, SH, Carlton, AG, Goldstein, AH, Guo, H, Hu, W, Isaacman-Vanwertz, G, Jimenez, JL, Misztal, PK, Murphy, BN, Nenes, A, Ng, NL, Pye, HOT, Surratt, JD, Vasilakos, P, Weber, R, Xu, L   +16 more
core   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

, 2009
We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors.
Gao, Xu, Guo, Hongxuan, Guo, Kang, Li, Kui, Liu, Zhiguo, Xia, Yidong, Xu, Bo, Yin, Jiang   +7 more
core   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source