Results 71 to 80 of about 46,832 (274)

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

2k nonvolatile shadow RAM and 256k EEPROM SONOS nonvolatile memory development [PDF]

Seventh Biennial IEEE International Nonvolatile Memory Technology Conference. Proceedings (Cat. No.98EX141), 2002
This paper describes SONOS nonvolatile memory development at Sandia National Laboratories. A 256 kbit EEPROM nonvolatile memory and a 2 kbit nonvolatile shadow RAM are under development using an n-channel CMOS/SONOS (complementary metal oxide semiconductor/silicon oxide nitride oxide semiconductor) memory technology.
R.D. Nasby, J.R. Murray, S.D. Habermehl, R.S. Bennett, B.C. Tafoya-Porras, P.R. Mahl, J.L. Rodriguez, R.V. Jones, M.G. Knoll   +8 more
openaire   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

III-nitride memristors: materials, devices, and applications

Materials Futures
Memristors, with their compactness, nonvolatile storage, and dynamic resistance modulation, are poised to revolutionize next-generation memory and neuromorphic computing paradigms. III-nitride materials, such as boron nitride (BN), gallium nitride (GaN),
Yang Yang, Haotian Li, Qilin Hua
doaj   +1 more source

Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures

Journal of Materiomics, 2018
We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable ...
Zhi-Xue Xu, Jian-Min Yan, Meng Xu, Ting-Wei Chen, Lei Guo, Guan-Yin Gao, Xiao-Guang Li, Hao-Su Luo, Yu Wang, Ren-Kui Zheng   +9 more
doaj   +1 more source

Emergence of ferroelectricity in a nonferroelectric monolayer

Nature Communications, 2023
Ferroelectricity in ultrathin two-dimensional (2D) materials has attracted broad interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics.
Wenhui Li, Xuanlin Zhang, Jia Yang, Song Zhou, Chuangye Song, Peng Cheng, Yi-Qi Zhang, Baojie Feng, Zhenxing Wang, Yunhao Lu, Kehui Wu, Lan Chen   +11 more
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Nonvolatile dynamic memories [PDF]

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004
This paper demonstrates that electronically passivated Si-SiO/sub 2/ interface enables the development of nonvolatile dynamic memories. Experimental results on charge-retention times are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into SiC.
openaire   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source