Results 91 to 100 of about 1,757,496 (307)

Monolayer MoS2-based nonvolatile transistors with a titanium nitride in the gate

AIP Advances, 2019
Low-power, nonvolatile transistors are demanded in the digital electronics development. In our work, molybdenum disulfide (MoS2) acts as the channel material integrated with TiN, which is used as a floating gate to build a floating gate transistor.
Kailiang Huang, Miao Zhao, Xueyuan Liu, Chao Feng, Bing Sun, Hudong Chang, Yuping Zeng, Honggang Liu   +7 more
doaj   +1 more source

Nonvolatile read/write memory element - A concept [PDF]

, 1971
Memory, with limited number of programming cycles, is achieved by using verticle, fusible links in series with oxide breakthrough elements. Memory elements are fabricated with integrated circuit technology and are ideal for low power digital computer ...
Cricchi, J. R., Lytle, W. J.
core   +1 more source

Electrostatically Controlled Magnetization Rotation in Ferromagnet-Topological Insulator Planar Structures

, 2012
An approach to the electrostatic control of $90^{\circ}$ magnetization rotation in the hybrid structures composed of topological insulators (TIs) and adjacent ferromagnetic insulators (FMI) is proposed and studied.
Duan, Xiaopeng, Kim, Ki Wook, Semenov, Yuriy G   +2 more
core   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source

Transducers Across Scales and Frequencies: A System‐Level Framework for Multiphysics Integration and Co‐Design

Advanced Materials Technologies, EarlyView.
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu, Mengyao Xiao, Zhouli Sui, Yinpeng Wang, Daoye Zheng, Yuxin Liu, Luwei Wang, Huajun Liu, Chengkuo Lee   +8 more
wiley   +1 more source

Quasi‐Nonvolatile Silicon Memory Device

Advanced Materials & Technologies, 2020
Memory hierarchy among conventional memory technologies is one of the main bottlenecks in modern computer systems; alternative memory technologies are thus necessary for quasi‐nonvolatile memory applications.
Doohyeok Lim, Jaemin Son, Kyoungah Cho, Sangsig Kim   +3 more
semanticscholar   +1 more source

Auto‐Routing Fluidic Printed Circuit Boards

Advanced Robotics Research, EarlyView.
This work introduces (STREAM) software tool for routing efficiently advanced macrofluidics, an open‐source software tool for automating the design of 3D‐printable fluidic circuit boards. STREAM streamlines tube routing and layout, enabling the rapid fabrication of fluidic networks for soft robotics, lab‐on‐a‐chip devices, microfluidics, and biohybrid ...
Savita V. Kendre, Lehong Wang, Haotian Liu, Markus P. Nemitz   +3 more
wiley   +1 more source

Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

Physical Review X, 2013
Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures,
Shuxiang Wu, Xin Luo, Stuart Turner, Haiyang Peng, Weinan Lin, Junfeng Ding, Adrian David, Biao Wang, Gustaaf Van Tendeloo, Junling Wang, Tom Wu   +10 more
doaj   +1 more source

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Nanoscale Research Letters, 2017
In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu, Yang Zhang, Zhenjie Tang, Zhengjie Shao, Guofu Zhou, Minghui Qin, Min Zeng, Sujuan Wu, Zhang Zhang, Jinwei Gao, Xubing Lu, Junming Liu   +11 more
doaj   +1 more source

Laser‐Induced Ultrafast Magnetic Phase Transition in 2D Van Der Waals Antiferromagnetic Heterostructures

Advanced Science, EarlyView.
In this work, ultrafast laser‐induced spin transfer and spin relaxation dynamics in 2D van der Waals antiferromagnetic CrI3/CrGeTe3 heterostructures are investigated. Laser excitation is demonstrated to induce pronounced interlayer nonequilibrium spin dynamics and ultrafast magnetic moment reconstruction, driving a transition from an antiferromagnetic (
Yang Wu, Fulu Zheng, San‐Dong Guo, Thomas Frauenheim, Zhaobo Zhou, Junjie He   +5 more
wiley   +1 more source