Results 101 to 110 of about 1,757,496 (307)

Tunable Switching Mechanisms in HfZrO2‐Based Tunnel Junctions for High‐Performance Synaptic Arrays

Advanced Science, EarlyView.
This work demonstrates hybrid switching in engineered HZO‐based FTJs, enabled by controlled interlayer design and oxygen scavenging dynamics. The combined switching mechanism produces robust multilevel conductance states in large crossbar arrays, offering a materials‐driven pathway toward scalable in‐memory computing with enhanced tunability and ...
Jiwon You, Jeong‐Han Kim, Minsuk Song, Been Kwak, Eun Chan Park, Manh‐Cuong Nguyen, Wonjun Shin, Jangsaeng Kim, Daewoong Kwon   +8 more
wiley   +1 more source

Borophene: Crucial Challenges and the Way Forward

Advanced Science, EarlyView.
This review explores the challenges and progress in borophene research, focusing on synthesis strategies, structural properties, and potential applications. It highlights key experimental breakthroughs, discusses theoretical insights into borophene's unique features, and addresses pathways for overcoming stability and scalability issues.
Zhixuan Li, Jeyaraman Sankar, Prashant Kumar, Ajayan Vinu   +3 more
wiley   +1 more source

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Scientific Reports, 2017
Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state.
Yanmei Sun, Dianzhong Wen, Xuduo Bai, Junguo Lu, Chunpeng Ai   +4 more
doaj   +1 more source

Recent Advances and Perspectives on Field‐Effect Transistors for Artificial Visual Neuromorphic Systems

Advanced Science, EarlyView.
This review presents a comprehensive overview of FET‐based visual neuromorphic systems, covering their semiconductor materials, core device architectures, and operating mechanisms. It further reviews their implementation in emulating biological visual functions, addresses current technological challenges, and outlines future development directions. The
Liu Yaqian, Lang Menghua, Xu Yihang, Zhang Manyu, Lei Chunkang, Lu Xiaozhou, Dou Yi, Wang Lingli, Jiang Liying, Hu Yuanyuan, Chen Huipeng, Jiang Lang   +11 more
wiley   +1 more source

Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications

Advanced Science, EarlyView.
The HfxZr1‐xO2‐based ferroelectric/antiferroelectric bilayer capacitor exhibits morphotropic‐phase‐boundary behavior with a high dielectric constant (∼52) at 2 V. Phase engineering stabilizes o/t‐phase coexistence and suppresses m‐phase formation, enabling capacitance enhancement and self‐optimization under cycling for scalable low‐voltage, high‐κ ...
Junseok Kim, Hyeonjung Park, Changwoo Han, Huiseong Shin, Myeongjae Choi, Changhwan Shin   +5 more
wiley   +1 more source

NVQuery: Efficient Query Processing in Nonvolatile Memory

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2019
Today’s computing systems use a huge amount of energy and time to process basic queries in database. A large part of it is spent in data movement between the memory and processing cores, owing to the limited cache capacity and memory bandwidth of ...
M. Imani, Saransh Gupta, Sahil Sharma, T. Rosing   +3 more
semanticscholar   +1 more source

High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret

Advanced Electronic Materials, 2020
Organic nonvolatile memory devices based on organic field‐effect transistors (OFETs) have attracted attention as promising memory components in flexible organic integrated circuits.
Yeon‐Ju Kim, Minji Kang, Min‐Hye Lee, Ji‐Sue Kang, Dong‐Yu Kim   +4 more
doaj   +1 more source

Emerging Device Applications From Strong Light–Matter Interactions in 2D Materials

Advanced Science, EarlyView.
Two‐dimensional semiconductors enable extremely compact optoelectronic devices such as solar cells, sensors, LEDs, and lasers. Their strong light–matter interactions allow efficient light emission, detection, and energy conversion. This review article discusses the recent progress in integrating these materials with optical cavities and nanostructures ...
Janani Archana K, Kumar Shwetabh, Reyas Ali, Ramji Velayutham, Koustav Das, Abhishek Mondal, Prashant Kumar, Surendra B. Anantharaman   +7 more
wiley   +1 more source

Exploring Design Dimensions in Flash-based Mass-memory Devices [PDF]

, 2009
Mission-critical space system applications present several issues: a typical one is the design of a mass-memory device (i.e., a solid- state recorder).
Caramia, M., Di Carlo, Stefano, Fabiano, Michele, Prinetto, Paolo Ernesto   +3 more
core  

Orientation‐Confinement‐Engineered Stabilization of Ferroelectricity in HfO2 toward Maximum Polarization

Advanced Science, EarlyView.
Ferroelectric phase stability in Hf₀.5Zr₀.5O2 films is enhanced by confinement to the (111) crystal orientation, as demonstrated by first‐principles calculations and experiments. Polarization approaching its maximum value is achieved through selective ferroelectric switching paths, which are further tuned by oxygen vacancies and cation doping to ...
Fatoye Sawyerr, Yongqing Sun, Zekun Zhang, Kang Jia, Shuning Lv, Qi Hu, Shu Shi, Qiushi Huang, Xie Zhang, Xiaoli Fan, Li‐min Liu, Shifeng Wen, Zheng Wen, Tengfei Cao, Jingsheng Chen   +14 more
wiley   +1 more source