Results 111 to 120 of about 1,757,496 (307)

SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography [PDF]

, 2014
textA highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and
Ji, Li, active 21st century
core  

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source

Strain‐Assembled Crystalline SrRuO3 Microtube and Emergent Curvilinear Magnetism

Advanced Science, EarlyView.
The interfacial‐strain assembly based on planar nanomembranes presents a promising approach for constructing novel magnetic microstructures. By employing the perpendicular magnetic anisotropic SrRuO3 freestanding nanomembrane as a model system, we exploit the interfacial strain effect within the crystalline SrTiO3/SrRuO3 bilayer, and successfully ...
Lei Gao, Yuqian Wang, Xiangyu Lyu, Pengyu Liu, Mingtong Zhu, Jin Liu, Mengcheng Li, Ailing Ji, Qinghua Zhang, Lin Gu, Libo Ma, Zexian Cao, Nianpeng Lu   +12 more
wiley   +1 more source

Melting-free integrated photonic memory with layered polymorphs

Nanophotonics
Chalcogenide-based nonvolatile phase change materials (PCMs) have a long history of usage, from bulk disk memory to all-optic neuromorphic computing circuits.
Ullah Kaleem, Li Qiu, Li Tiantian, Gu Tingyi   +3 more
doaj   +1 more source

All‐Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In‐Memory Computing

Advanced Science, EarlyView.
We propose an optical ferroelectric field‐effect transistor, composed of a MoS2/CIPS heterostructure, demonstrates the feasibility of all‐optical nonvolatile memory, neuromorphic computing, and logic‐in‐memory operations. The device exhibits reversible light‐controlled memory states, retina‐like synaptic plasticity, and wavelength‐selective ...
Jingjie Niu, Jiahui Lyu, Jie Li, Koyal Suman Samantaray, Cheolhwa Jang, Yoonmyung Lee, Ji‐Sang Park, Sungjoo Lee   +7 more
wiley   +1 more source

Computerized monitoring and control of experiments in space [PDF]

The computer subsystem of the Villanova University GAS (Get Away Special) experiment apparatus is discussed. The function of the computer subsystem is to provide data acquisition and control system support to the experiments.
Janisch, Thomas V.
core   +1 more source

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

Advanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami, Yuichi Murakami, Ryota Watarai, Yu Shiratsuchi, Yoshihiro Gohda, Kohei Hamaya   +5 more
wiley   +1 more source

Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD. [PDF]

Micromachines (Basel), 2023
Oh JH, Yu YS.
europepmc   +1 more source

Current‐Driven Nonreciprocal Response of Nonequilibrium Skyrmions

Advanced Science, EarlyView.
A skyrmion holds great promise for spintronic applications owing to its intrinsic topological stability and high mobility under ultra‐low current excitation. Here, by means of in situ electron microscopy, we demonstrate a skyrmion diode effect and the associated current‐driven nonreciprocal skyrmion dynamics in a designed FeGe‐based microdevice.
Xiuzhen Yu, Soju Furuta, Xichao Zhang, Yi‐Ling Chiew, Kiyomi Nakajima, Kosuke Karube, Naoya Kanazawa, Yasujiro Taguchi, Yoshinori Tokura, Masahito Mochizuki, Fumitaka Kagawa   +10 more
wiley   +1 more source

Neuromorphic computing using non-volatile memory

Advances in Physics: X, 2017
Dense crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing massively-parallel and highly energy-efficient neuromorphic computing systems.
Geoffrey W. Burr, Robert M. Shelby, Abu Sebastian, Sangbum Kim, Seyoung Kim, Severin Sidler, Kumar Virwani, Masatoshi Ishii, Pritish Narayanan, Alessandro Fumarola, Lucas L. Sanches, Irem Boybat, Manuel Le Gallo, Kibong Moon, Jiyoo Woo, Hyunsang Hwang, Yusuf Leblebici   +16 more
doaj   +1 more source