Results 121 to 130 of about 1,757,496 (307)

Controllable Resistive Switching in ReS₂ /WS₂ Heterostructure for Nonvolatile Memory and Synaptic Simulation. [PDF]

Adv Sci (Weinh), 2023
Huang F, Ke C, Li J, Chen L, Yin J, Li X, Wu Z, Zhang C, Xu F, Wu Y, Kang J.   +10 more
europepmc   +1 more source

Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors

Advanced Science, EarlyView.
The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan, Meiqi An, Weili Liu, Haotian Wang, Shuai Yang, Jing Li, Jianliang Li, Yingmin Luo, Chao Wang, Jiao Xu, Yaodan Chi, Yiming Yang   +11 more
wiley   +1 more source

Expression of Concern: Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications. [PDF]

PLoS One, 2023
PLOS ONE Editors.
europepmc   +1 more source

Nonreciprocal Charge Transport in an Iron‐Based Superconductor with Broken Inversion Symmetry Engineered by a Hydrogen‐Concentration Gradient

Advanced Science, EarlyView.
Concentration gradients can serve as a universal platform for breaking spatial inversion symmetry. We demonstrate this concept by observing nonreciprocal electrical transport—a sensitive probe of inversion‐symmetry breaking—in the iron‐based superconductor Sm1111 with an engineered hydrogen gradient.
Takayuki Nagai, Yukito Nishio, Jumpei Matsumoto, Kota Hanzawa, Hidenori Hiramatsu, Hideo Hosono, Tsuyoshi Kimura   +6 more
wiley   +1 more source

MEFET-Based CAM/TCAM for Memory-Augmented Neural Networks

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Memory-augmented neural networks (MANNs) require large external memories to enable long-term memory storage and retrieval. Content-addressable memory (CAM) is a type of memory used for high-speed searching applications and is well-suited for MANNs ...
Sai Sanjeet, Jonathan Bird, Bibhu Datta Sahoo   +2 more
doaj   +1 more source

Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology

Advances in Condensed Matter Physics, 2014
The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 μm technology are presented. This characterization allows the development, design, and characterization of a new current-mode analog ...
Enrique J. Tinajero-Perez, Jesus Ezequiel Molinar-Solis, Rodolfo Z. Garcia-Lozano, Pedro Rosales-Quintero, Jose M. Rocha-Perez, Alejandro Diaz-Sanchez, Arturo Morales-Acevedo   +6 more
doaj   +1 more source

Preparation of Remote Plasma Atomic Layer-Deposited HfO₂ Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices. [PDF]

Nanomaterials (Basel), 2023
Yoo JH, Park WJ, Kim SW, Lee GR, Kim JH, Lee JH, Uhm SH, Lee HC.   +7 more
europepmc   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO₃ films. [PDF]

RSC Adv, 2022
Song Y, Wu Q, Jia C, Gao Z, Zhang W.
europepmc   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials, EarlyView.
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam   +7 more
wiley   +1 more source