Results 131 to 140 of about 1,757,496 (307)

A Pennsylvania State University/General Electric Get Away Special (GAS) experiment [PDF]

We describe four student-designed experiments by the Pennsylvania State University, which are planned for a GAS canister. The four experiments will measure: the effects of radiation on semiconductors; orbital debris impacts; the Space Shuttle's magnetic ...
Evanisko, George, Grosch, Theodore, Youssef, Milad, Yurack, Jim   +3 more
core   +1 more source

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors

Advanced Electronic Materials, EarlyView.
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár, Tímea Nóra Török, János Volk, Roland Kövecs, László Pósa, Péter Balázs, György Molnár, Nadia Jimenez Olalla, Zoltán Balogh, János Volk, Juerg Leuthold, Miklós Csontos, András Halbritter   +12 more
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

Advanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis, Anastasia Soultati, Leonidas C. Palilis, Ermioni Polydorou, Konstantinos Davazoglou, Petros‐Panagis Filippatos, Goutham Raj Perumallapelli, Ravindra Naik Bukke, Abd. Rashid bin Mohd Yusoff, Ilhwan Ryu, Peng Gao, Alexander Chroneos, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou   +13 more
wiley   +1 more source

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO₂/Al₂O₃-Based Charge Trapping Layers. [PDF]

Materials (Basel), 2022
Spassov D, Paskaleva A, Guziewicz E, Wozniak W, Stanchev T, Ivanov T, Wojewoda-Budka J, Janusz-Skuza M.   +7 more
europepmc   +1 more source

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment [PDF]

Thin film ferroelectric capacitors comprising a ferroelectric film sandwiched between electrodes for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode. The anneal is
Thakoor, Sarita
core   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications. [PDF]

Micromachines (Basel), 2021
Sung JY, Jeong JK, Ko WS, Byun JH, Lee HD, Lee GW.   +5 more
europepmc   +1 more source

Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2

Advanced Electronic Materials, EarlyView.
Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx‐only devices, these heterostructures demonstrate higher switching voltages, faster switching speeds, and reduced variability.
Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme   +9 more
wiley   +1 more source

High-Quality Single-Crystalline β-Ga₂O₃ Nanowires: Synthesis to Nonvolatile Memory Applications. [PDF]

Nanomaterials (Basel), 2021
Sivakumar C, Tsai GH, Chung PF, Balraj B, Lin YF, Ho MS.   +5 more
europepmc   +1 more source