Results 141 to 150 of about 1,757,496 (307)

Concealable and Field‐Free Physical Unclonable Function Based on Voltage‐Controlled Magnetic Tunnel Junctions

Advanced Electronic Materials, EarlyView.
A concealable physical unclonable function (PUF) based on an array of 384 nanoscale voltage‐controlled magnetic tunnel junctions is demonstrated. The PUF operates without any external magnetic field. It uses a combination of deterministic and stochastic switching mechanisms, based on the spin transfer torque and voltage‐controlled magnetic anisotropy ...
Thomas Neuner, Jaimin Kang, Jordan Athas, Christian Duffee, Noraica Davila Melendez, Jordan A. Katine, Pedram Khalili Amiri   +6 more
wiley   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

Design of an Intermittent-Computing-Oriented Nonvolatile Register With a Switching-Probability-Aware Store-and-Verify Scheme

IEEE Access
This paper describes the configuration of a magnetic tunnel junction (MTJ)-based nonvolatile register designed for the greedy utilization of supplied energy in intermittent computing.
Masanori Natsui, Takahiro Hanyu
doaj   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Lab-on-device investigation of phase transition in MoOx semiconductors

Nature Communications
Precise tuning of phase transition material properties enables multifunctional devices for information processing and energy conversion, but controlling on-device phase transitions and monitoring microscopic mechanisms remains challenging.
Xiaoci Liang, Dongyue Su, Younian Tang, Bin Xi, Chunzhen Yang, Huixin Xiu, Jialiang Wang, Chuan Liu, Mengye Wang, Yang Chai   +9 more
doaj   +1 more source

Structure and Spectroscopic Characterisation of Phenanthroline‐Based Iodobismuthate(III) Complexes Utilised for Raw Acoustic Signal Classification

Advanced Intelligent Discovery, EarlyView.
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz, Gisya Abdi, Andrzej Sławek, Marlena Gryl, Konrad Szaciłowski   +4 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Investigation of Analog Memristor Characteristics for Hardware Synaptic Weight in Multilayer Neural Network

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
The systematic design of memristor‐based neural network is provided by analog conductance state parameters to accurately emulate the software‐based high‐resolution weight at discrete device level. The requirement of discrete analog conductance of memristor device is measured as ≈50 states with nonlinearity value of ≈0.142 within the deviation range of ...
Jingon Jang, Yoonseok Song, Sungjun Park
wiley   +1 more source

Scalable Platform Enabling Reservoir Computing With Nanoporous Oxide Memristors for Image Recognition and Time Series Prediction

Advanced Intelligent Systems, EarlyView.
The approach of physical in materia computing incorporates parallel computing within the medium itself. A scalable and energy‐efficient, oxide‐based computational platform is realized in form of a nanoporous network of volatile niobium oxide memristors sandwiched between top and bottom metallic electrodes, and then tested for prediction and ...
Joshua Donald, Ben A. Johnson, Amir Mehrnejat, Alex Gabbitas, Arthur G. T. Coveney, Alexander G. Balanov, Sergey Savel’ev, Pavel Borisov   +7 more
wiley   +1 more source

Material challenges for nonvolatile memory

APL Materials, 2022
Bhagwati Prasad, Stuart Parkin, Themis Prodromakis, Chang-Beom Eom, Jordi Sort, J. L. MacManus-Driscoll   +5 more
doaj   +1 more source